Wafer thermal desorption spectrometry in a rapid thermal processor using atmospheric pressure ionization mass spectrometry

This paper demonstrates the possibility of performing thermal desorption spectrometry (TDS) on wafers in an atmospheric pressure rapid thermal processor (RTP). A special gas sampling system is described, which allows the analysis of gas composition inside the RTP chamber with atmospheric pressure ionization mass spectrometry (APIMS). Sampling is controlled with no valve operation and high dilution of the sample gas flow can be achieved while maintaining a short sample transfer time. It is shown how gas flows can be optimized to improve the sensitivity and resolution of TDS spectra. The RTP-APIMS setup was used in a study of H/sub 2/O absorption by low dielectric constant fluorinated silica glass (FSG) films, helping to develop a cap that reduced H/sub 2/O absorption upon storage by a factor of 60. NH/sub 3/ is shown to desorb from FSG and SiO/sub 2/ films deposited by plasma-enhanced chemical vapor deposition (PECVD), which may be of concern for the reliability of integrated circuits.

[1]  T. Hattori,et al.  Identification and Removal of Trace Organic Contamination on Silicon Wafers Stared in Plastic Boxes , 1996 .

[2]  S. Koizumi,et al.  Interaction between water and fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition , 1997 .

[3]  R. Katsumata,et al.  Water Absorption Properties of Fluorine-Doped SiO2 Films Using Plasma-Enhanced Chemical Vapor Deposition , 1996 .

[4]  A. Verma,et al.  Dielectric Constant and Stability of Fluorine‐Doped Plasma Enhanced Chemical Vapor Deposited SiO2 Thin Films , 1996 .

[5]  R. C. Weast.  CRC Handbook of Chemistry and Physics , 1973 .

[6]  M. Offenberg,et al.  Hydrocarbon reaction with HF‐cleaned Si(100) and effects on metal‐oxide‐semiconductor device quality , 1991 .

[7]  Koichiro Saga,et al.  Influence of Surface Organic Contamination on the Incubation Time in Low‐Pressure Chemical Vapor Deposition , 1997 .

[8]  K. Maex,et al.  Critical role of degassing for hot aluminum filling , 1998 .

[9]  K. J. Budde,et al.  Application of Ion Mobility Spectrometry to Semiconductor Technology: Outgassings of Advanced Polymers under Thermal Stress , 1995 .

[10]  Y. Mitsui,et al.  Quantitative Analysis of Trace Water in Highly Puified Nitrogen Gas by Atmospheric Pressure Ionization Mass Spectrometer , 1995 .

[11]  Hidetsugu Uchida,et al.  Thermal Desorption and Infrared Studies of Plasma-Enhanced Chemical Vapor Deposited SiO Films with Tetraethylorthosilicate , 1993 .

[12]  H. Tomioka,et al.  Thermal desorption behaviour of adsorbed materials on wafer surfaces , 1997, 1997 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat. No.97CH36023).