Optimum carrier distribution of the IGBT

Abstract In this paper, an analytical model is developed to optimize the charge profile in an IGBT for the trade-off between the on-state performance and turn-off losses. It is found that, in contrast to a typical IGBT design, the optimum carrier distribution has a significantly higher carrier concentration at the cathode end of the device than that at the anode end. The results, which are supported by 2-D numerical simulations and experiments, provide an interesting guideline for optimizing the IGBT. Practical considerations of the predicted optimum design are discussed.

[1]  H. Takahashi,et al.  Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[2]  G. Deboy,et al.  Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode) , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

[3]  Y. Ishimura,et al.  A high performance IGBT with new n+buffer structure , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

[4]  K. Sakurai,et al.  Analysis on device structures for next generation IGBT , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[5]  Hideo Kobayashi,et al.  A novel high-conductivity IGBT (HiGT) with a short circuit capability , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[6]  Y. Tomomatsu,et al.  High Voltage IGBT(HV-IGBT) having p'/p' collector region , 1998 .

[7]  S. Eicher,et al.  Design evaluation of injection enhancement gate transistor based on device simulation , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[8]  Y. Tomomatsu,et al.  High voltage IGBT (HV-IGBT) having p/sup +//p/sup -/ collector region , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[9]  Stephen J. Finney,et al.  A new analytical IGBT model with improved electrical characteristics , 1999 .

[10]  Gary M. Dolny,et al.  High performance wide trench IGBTs for motor control applications , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

[11]  Wolfgang Fichtner,et al.  Punchthrough type GTO with buffer layer and homogeneous low efficiency anode structure , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[12]  Florin Udrea,et al.  The trench Insulated Gate Bipolar Transistor— a high power switching device , 1997 .

[13]  H. Kon,et al.  The 4500 V-750 A planar gate press pack IEGT , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[14]  G. Tam,et al.  High-speed insulated-gate bipolar transistors fabricated using silicon wafer bonding , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.

[15]  Stephen J. Finney,et al.  A review of IGBT models , 2000 .

[16]  A. Hefner,et al.  Performance trade-off for the Insulated Gate Bipolar Transistor: Buffer layer versus base lifetime reduction , 1987, 1986 17th Annual IEEE Power Electronics Specialists Conference.

[17]  D. Burns,et al.  NPT-IGBT-optimizing for manufacturability , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.

[18]  T. Laska,et al.  1200 V-trench-IGBT study with square short circuit SOA , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[19]  H. Kondoh,et al.  Partial lifetime control in IGBT by helium irradiation through mask patterns , 1991, [1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.

[20]  Akio Uenishi,et al.  A design concept for the low turn-off loss 4.5 kV trench IGBT , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[21]  Tetsuo Takahashi,et al.  A design concept for the low forward voltage drop 4500 V trench IGBT , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[22]  Florin Udrea,et al.  A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT) , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

[23]  F. Udrea,et al.  1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance , 1999, IEEE Electron Device Letters.

[24]  H. Ohashi,et al.  1800V bipolar-mode MOSFETs: A first application of silicon wafer direct bonding (SDB) technique to a power device , 1986, 1986 International Electron Devices Meeting.

[25]  Hiromichi Ohashi,et al.  Advanced lifetime control for reducing turn-off switching losses of 4.5 kV IEGT devices , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[26]  Wolfgang Fichtner,et al.  On-state and short circuit behaviour of high voltage trench gate IGBTs in comparison with planar IGBTs , 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

[27]  Masashi Kuwahara,et al.  1200 V trench gate NPT-IGBT (IEGT) with excellent low on-state voltage , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[28]  H. Kondoh,et al.  Effects of shorted collector on characteristics of IGBTs , 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..

[29]  Allen R. Hefner,et al.  An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor , 1988 .

[30]  G. Tam,et al.  Analysis of direct wafer bond IGBTs with heavily doped N+ buffer layer , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.