Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor

The authors describe a study of charge control in conjunction with DC and RF performance of 0.35- mu m-gate-length pseudomorphic AlGaAs/InGaAs MODFETs. Using C-V measurements, they estimate that a two-dimensional electron gas (2DEG) with density as high as 1.0*10/sup 12/ cm/sup -2/ can be accumulated in the InGaAs channel at 77 K before the gate begins to modulate parasitic charges in the AlGaAs. This improvement in charge control of about 10-30% over a typical AlGaAs/GaAs MODFET may partially be responsible for the superior DC and RF performance of the AlGaAs/InGaAs MODFET. At room temperature, the devices give a maximum DC voltage gain g/sub m//g/sub d/ of 32 and a current gain cutoff frequency f/sub T/ of 46 GHz. These results are state of the art for MODFETs of similar gate length. >

[1]  Hadis Morkoç,et al.  Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures , 1982 .

[2]  W. Kopp,et al.  High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors , 1985, IEEE Electron Device Letters.

[3]  K.H.G. Duh,et al.  Millimeter-wave low-noise high electron mobility transistors , 1985, IEEE Electron Device Letters.

[4]  H. Morkoc,et al.  Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters , 1984, IEEE Transactions on Electron Devices.

[5]  Luke F. Lester,et al.  60 GHz low-noise high-electron-mobility transistors , 1986 .

[6]  M. I. Aksun,et al.  Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor , 1986, IEEE Electron Device Letters.

[7]  N. J. Shah,et al.  Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technology , 1986, IEEE Transactions on Electron Devices.

[8]  H. Morkoc,et al.  On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures , 1984, IEEE Transactions on Electron Devices.

[9]  P. Chao,et al.  Channel-length effects in quarter-micrometer gate-length GaAs MESFET's , 1983, IEEE Electron Device Letters.

[10]  P.J. Tasker,et al.  Microwave characterization of very high transconductance MODFET , 1984, 1984 International Electron Devices Meeting.

[11]  E. Constant,et al.  Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's , 1980, IEEE Transactions on Electron Devices.

[12]  P. Tasker,et al.  Comments on "A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer" , 1987 .

[13]  P. Tasker,et al.  Modulation Efficiency Limited High Frequency Performance of the MODFET , 1987 .

[14]  P. Tasker,et al.  Carrier Deconfinement Limited Velocity In Pseudomorphic AlGaAsiin GaAs Modulation-doped Field Effect Transistors (MODFET's) , 1987, IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings..

[15]  S. L. Wright,et al.  Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition , 1986 .

[16]  W. Kopp,et al.  Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors , 1986, IEEE Transactions on Electron Devices.

[17]  Y. Suzuki,et al.  A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer , 1986, IEEE Transactions on Electron Devices.

[18]  J. Woodall,et al.  An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT , 1985, IEEE Electron Device Letters.