A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors

We propose a new parameter extraction method for advanced polysilicon emitter bipolar transistors. This method is based on the predetermination of equivalent circuit parameters using the analytical expressions of de-embedded Z-parameters of these devices. These parameter values are used as initial values for the parameter extraction process using optimization. The entire device equivalent circuit, containing RF probe pad and interconnection circuit parameters extracted by test structures, is optimized to fit measured S-parameters for eliminating de-embedding errors due to the imperfection of pad and interconnection test structures. The equivalent circuit determined by this method shows excellent agreement with the measured S-parameters from 0.1 to 26.5 GHz. >

[1]  I. Getreu,et al.  Modeling the bipolar transistor , 1978 .

[2]  Willy Sansen,et al.  Characterization and measurement of the base and emitter resistances of bipolar transistors , 1972 .

[3]  H. Cho,et al.  A three-step method for the de-embedding of high-frequency S-parameter measurements , 1991 .

[4]  Hwa-Nien Yu,et al.  Self-aligned bipolar transistors for high-performance and low-power-delay VLSI , 1981, IEEE Transactions on Electron Devices.

[5]  E. Strid,et al.  GHz on-silicon-wafer probing calibration methods , 1988, Proceedings of the 1988 Bipolar Circuits and Technology Meeting,.

[6]  Tadashi Sakai,et al.  Gigabit logic bipolar technology: advanced super self-aligned process technology , 1983 .

[7]  Robert J. Trew,et al.  A parameter extraction technique for heterojunction bipolar transistors , 1989, IEEE MTT-S International Microwave Symposium Digest.

[8]  J.A.M. Geelen,et al.  An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[9]  Anand Gopinath,et al.  Parameter extraction technique for HBT equivalent circuit using cutoff mode measurement , 1992 .

[10]  S. Lee,et al.  New circuit model for RF probe pads and interconnections for the extraction of HBT equivalent circuits , 1991, IEEE Electron Device Letters.

[11]  D.D. Tang,et al.  Method for determining the emitter and base series resistances of bipolar transistors , 1984, IEEE Transactions on Electron Devices.

[12]  A. Neugroschel.  Measurement of the low-current base and emitter resistances of bipolar transistors , 1987, IEEE Transactions on Electron Devices.

[13]  David L. Pulfrey,et al.  Reconciliation of methods for estimating f/sub max/ for microwave heterojunction transistors , 1991 .