Highly Stable 35 GHz GaAs FET Oscillator

A 35 GHz FET oscillator stabilized with a dielectric resonator has achieved a single sideband noise-to-carrier ratio of -87 dBc/Hz at fm = 25 kHz, external Q /spl cong/ 3000, and frequency stability of 1 ppm/°C. Using this oscillator as the LO, a compact MIC Ka-band receiver was also developed.

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