Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

Abstract The forming process, which corresponds to the activation of the switching filament in Resistive Random Access Memory (RRAM) arrays, has a strong impact on the cells’ performances. In this paper we characterize and compare different pulse forming techniques in terms of forming time, yield and cell-to-cell variability on 4 kbits RRAM arrays. Moreover, post-forming modeling during Reset operation of correctly working and over formed cells has been performed. An incremental form and verify technique, based on a sequence of trapezoidal waveforms with increasing voltages followed by a verify operation that terminates when the expected switching behavior has been achieved, showed the best results. This procedure narrows the post-forming current distribution whereas reducing the Reset switching voltage and the operative current. These advantages materialize in a better control of the cell-to-cell variability and in an overall time and energy saving at the system level.

[1]  An Chen,et al.  Variability of resistive switching memories and its impact on crossbar array performance , 2011, 2011 International Reliability Physics Symposium.

[2]  L. Goux,et al.  Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM , 2012, IEEE Transactions on Electron Devices.

[3]  Cheng-Wen Wu,et al.  Training-based forming process for RRAM yield improvement , 2011, 29th VLSI Test Symposium.

[4]  Frederick T. Chen,et al.  RRAM Defect Modeling and Failure Analysis Based on March Test and a Novel Squeeze-Search Scheme , 2015, IEEE Transactions on Computers.

[5]  Piero Olivo,et al.  Electrical characterization of read window in reram arrays under different SET/RESET cycling conditions , 2014, 2014 IEEE 6th International Memory Workshop (IMW).

[6]  L. Goux,et al.  Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation , 2012, 2012 International Electron Devices Meeting.

[7]  J. Koenderink.  Q… , 2014, Les noms officiels des communes de Wallonie, de Bruxelles-Capitale et de la communaute germanophone.

[8]  Heng-Yuan Lee,et al.  A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability , 2011, 2011 IEEE International Solid-State Circuits Conference.

[9]  T. Takagi,et al.  Conductive Filament Scaling of ${\rm TaO}_{\rm x}$ Bipolar ReRAM for Improving Data Retention Under Low Operation Current , 2013, IEEE Transactions on Electron Devices.

[10]  Piero Olivo,et al.  Statistical analysis of resistive switching characteristics in ReRAM test arrays , 2014, 2014 International Conference on Microelectronic Test Structures (ICMTS).

[11]  K. Higuchi,et al.  Investigation of Verify-Programming Methods to Achieve 10 Million Cycles for 50nm HfO2 ReRAM , 2012, 2012 4th IEEE International Memory Workshop.

[12]  P. Olivo,et al.  Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays , 2015, IEEE Transactions on Electron Devices.

[13]  D. Gilmer,et al.  Metal oxide resistive memory switching mechanism based on conductive filament properties , 2011 .

[14]  S. Dou,et al.  Magnetic properties and magnetocaloric effect of NdMn2−xCuxSi2 compounds , 2014 .

[15]  Shimeng Yu,et al.  On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy , 2012, IEEE Transactions on Electron Devices.

[16]  L. Perniola,et al.  Multi-scale quantum point contact model for filamentary conduction in resistive random access memories devices , 2014 .

[17]  Masahide Matsumoto,et al.  A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology , 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

[18]  P. Olivo,et al.  Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays , 2015, 2015 IEEE International Memory Workshop (IMW).

[19]  E. Miranda,et al.  Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions , 2010, IEEE Electron Device Letters.

[20]  R. Kraemer,et al.  Resistive switching behavior in TiN/HfO2/Ti/TiN devices , 2012, 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG).

[21]  T. Schroeder,et al.  In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells , 2014 .

[22]  Ute Drechsler,et al.  Transition-metal-oxide-based resistance-change memories , 2008, IBM J. Res. Dev..

[23]  P. Lorenzi,et al.  Forming Kinetics in $\hbox{HfO}_{2}$ -Based RRAM Cells , 2013, IEEE Transactions on Electron Devices.

[24]  Guido Groeseneken,et al.  Statistical insight into controlled forming and forming free stacks for HfOx RRAM , 2013 .

[25]  Jinn-Liang Liu,et al.  Poisson-Fermi model of single ion activities in aqueous solutions , 2015 .

[26]  D. Gilmer,et al.  Effects of RRAM Stack Configuration on Forming Voltage and Current Overshoot , 2011, 2011 3rd IEEE International Memory Workshop (IMW).

[27]  Qi Liu,et al.  Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices , 2015 .

[28]  Heng-Yuan Lee,et al.  Resistance switching for RRAM applications , 2011, Science China Information Sciences.

[29]  E. Miranda,et al.  The Quantum Point-Contact Memristor , 2012, IEEE Electron Device Letters.

[30]  G. Lo,et al.  Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM , 2013, 2013 IEEE International Electron Devices Meeting.

[31]  L. Goux,et al.  Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability , 2013, 2013 IEEE International Electron Devices Meeting.