Tilted-charge high speed (7 GHz) light emitting diode

We demonstrate a higher speed form of light emitting diode (LED), an asymmetrical two-junction tilted-charge LED, utilizing an n-type buried “drain” layer beneath the p-type “base” quantum-well (carrier and photon) active region. The drain layer tilts and pins the charge in the manner of a heterojunction bipolar light emitting transistor (HBLET), selecting and allowing only “fast” recombination (recombination lifetime τB of the order of base transit time τt). The tilted-charge LED, simple in design and construction, is capable of operation at low current in spontaneous recombination at a 7 GHz bandwidth or even higher with more refinement.

[1]  Milton Feng,et al.  Scaling of light emitting transistor for multigigahertz optical bandwidth , 2009 .

[2]  P. Heremans,et al.  Light-emitting diodes with 17% external quantum efficiency at 622 Mb/s for high-bandwidth parallel short-distance optical interconnects , 1999 .

[3]  Milton Feng,et al.  Laser operation of a heterojunction bipolar light-emitting transistor , 2004 .

[4]  N. Holonyak,et al.  COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS , 1962 .

[5]  Gerald B. Stringfellow,et al.  High brightness light emitting diodes , 1997 .

[6]  J. D. Kingsley,et al.  Coherent Light Emission From GaAs Junctions , 1962 .

[7]  J. Heinen,et al.  Light-emitting diodes with a modulation bandwidth of more than 1 GHz , 1976 .

[8]  W. E. Krag,et al.  SEMICONDUCTOR MASER OF GaAs , 1962 .

[9]  Milton Feng,et al.  Quantum-well-base heterojunction bipolar light-emitting transistor , 2004 .

[10]  High‐frequency operation of heavily carbon‐doped Ga0.51In0.49P/GaAs surface‐emitting light‐emitting diodes grown by metalorganic molecular beam epitaxy , 1991 .

[11]  Milton Feng,et al.  Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors , 2004 .

[12]  Jonathan J. Wierer,et al.  Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes , 1999 .

[13]  W. Dumke,et al.  STIMULATED EMISSION OF RADIATION FROM GaAs p‐n JUNCTIONS , 1962 .

[14]  S. Muller,et al.  Solid-state Device Research Conference , 1973 .

[15]  M. Melloch,et al.  Digital communications above 1 Gb/s using 890-nm surface-emitting light-emitting diodes , 2001, IEEE Photonics Technology Letters.

[16]  Eli Yablonovitch,et al.  GHz bandwidth GaAs light-emitting diodes , 1999 .

[17]  Milton Feng,et al.  Charge control analysis of transistor laser operation , 2007 .