Tilted-charge high speed (7 GHz) light emitting diode
暂无分享,去创建一个
Milton Feng | Chao-Hsin Wu | N. Holonyak | H. Then | N. Holonyak | C. Wu | M. Feng | G. Walter | H. W. Then | G. Walter
[1] Milton Feng,et al. Scaling of light emitting transistor for multigigahertz optical bandwidth , 2009 .
[2] P. Heremans,et al. Light-emitting diodes with 17% external quantum efficiency at 622 Mb/s for high-bandwidth parallel short-distance optical interconnects , 1999 .
[3] Milton Feng,et al. Laser operation of a heterojunction bipolar light-emitting transistor , 2004 .
[4] N. Holonyak,et al. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS , 1962 .
[5] Gerald B. Stringfellow,et al. High brightness light emitting diodes , 1997 .
[6] J. D. Kingsley,et al. Coherent Light Emission From GaAs Junctions , 1962 .
[7] J. Heinen,et al. Light-emitting diodes with a modulation bandwidth of more than 1 GHz , 1976 .
[8] W. E. Krag,et al. SEMICONDUCTOR MASER OF GaAs , 1962 .
[9] Milton Feng,et al. Quantum-well-base heterojunction bipolar light-emitting transistor , 2004 .
[11] Milton Feng,et al. Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors , 2004 .
[12] Jonathan J. Wierer,et al. Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes , 1999 .
[13] W. Dumke,et al. STIMULATED EMISSION OF RADIATION FROM GaAs p‐n JUNCTIONS , 1962 .
[14] S. Muller,et al. Solid-state Device Research Conference , 1973 .
[15] M. Melloch,et al. Digital communications above 1 Gb/s using 890-nm surface-emitting light-emitting diodes , 2001, IEEE Photonics Technology Letters.
[16] Eli Yablonovitch,et al. GHz bandwidth GaAs light-emitting diodes , 1999 .
[17] Milton Feng,et al. Charge control analysis of transistor laser operation , 2007 .