Fabrication of sub-10nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography

In this work, we report the fabrication of sub-10nm wide, doubly-clamped silicon carbon nitride (SiCN) resonators of up to [email protected] lengths. An existing resonator fabrication process has undergone a major improvement through the use of a single hydrogen silsesquioxane (HSQ) masking layer for SiCN patterned using electron beam lithography. Novel development strategies, comprising hot development and HF-trimming development, were also used. The crucial role of post-exposure resist processing in improving the resonator resolution and uniformity was demonstrated. Application of the optimized lithographic process has allowed us to claim the narrowest suspended bridge structures of several microns in length achieved to date.

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