论文信息 - E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology

E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology

E-band low-noise amplifier (LNA) monolithic millimeter-wave integrated circuits (MMICs) were developed using pseudomorphic In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) with a gate length of 50nm. The nanogate HEMTs demonstrated a maximum oscillation frequency (ƒmax) of 550GHz and a current-gain cutoff frequency (ƒT) of 450GHz at room temperature, which is first experimental demonstration that ƒmax as high as 550GHz are achievable with the improved one-step-recessed gate procedure. Furthermore, using a three-stage LNA-MMIC with 50-nm-gate InGaAs/InAlAs HEMTs, we achieved a minimum noise figure of 2.3dB with an associated gain of 20.6dB at 79GHz.

[1] Y. Yamashita,et al. Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates , 2006, IEEE Transactions on Electron Devices.

[2] T. Enoki,et al. 3 S/mm extrinsic transconductance of InP-based high electron mobility transistor by vertical and lateral scale-down , 2006 .

[3] M. Tokumitsu,et al. Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm $g_{m}$ and 500-GHz $f_{T}$ , 2007, IEEE Transactions on Electron Devices.

[4] L. Sadwick,et al. Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As , 1991, IEEE Electron Device Letters.

[5] Daehyun Kim,et al. 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz , 2008, IEEE Electron Device Letters.

[6] S. Hiyamizu,et al. Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE , 2001 .

[7] Tetsuya Suemitsu,et al. 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency , 1999 .

[8] Tetsuya Suemitsu,et al. Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs , 2001 .

[9] Y. Yamashita,et al. Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (4 1 1)A-oriented substrates by MBE , 2007 .