Investigation of mechanical stress effect on electrical behavior of Trench Punch Through IGBT under short-circuit condition at low and high temperature

Mechanical stress applied to the power devices can influence their static and dynamic electrical behaviors. The electrical characterization under mechanical stress might be exploited to monitor the mechanical state of the power assembly and then provide useful information regarding the health monitoring. In this study, we propose to evaluate the effect of mechanical stress on a Punch-Through Trench Gate IGBT under short-circuit configuration at low and high temperature using 2D finite element simulation. Whereas compressive mechanical stress do not influence the short-circuit current (current flow-lines and applied mechanical stress in the same direction), tensile mechanical stress will impact directly on the device current level and associated with the self-heating will induce a lower short-circuit current.