A 40-GHz Bandwidth Tapered Distributed LNA

In this brief, a design technique for tapered distributed low-noise amplifiers (LNAs) is presented. A circuit model is developed for gain and noise analysis of a nonuniform distributed amplifier (DA). It is shown that by optimal tapering of gate and drain transmission lines and transistors, the tapered distributed LNA can provide lower broadband average noise figure (NF) compared to a uniform DA. A proof-of-concept integrated circuit is implemented using a 0.1- $\mu \text{m}$ GaAs pHEMT process. The amplifier provides average gain of 15.2 dB and 3-dB bandwidth of 43.3 GHz. The average NF of 2.3 dB and minimum NF of 2.0 dB are achieved over 2–40 GHz. The chip consumes 55 mA current from a 2-V supply.

[1]  C. S. Aitchison,et al.  The Intrinsic Noise Figure of the MESFET Distributed Amplifier , 1985 .

[2]  A.M. Niknejad,et al.  Design of a CMOS Tapered Cascaded Multistage Distributed Amplifier , 2009, IEEE Transactions on Microwave Theory and Techniques.

[3]  F. Ellinger.  60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz , 2005, IEEE Journal of Solid-State Circuits.

[4]  W.R. Hewlett,et al.  Distributed Amplification , 1948, Proceedings of the IRE.

[5]  Mohamed I. Elmasry,et al.  A Low-Noise CMOS Distributed Amplifier for Ultra-Wide-Band Applications , 2008, IEEE Transactions on Circuits and Systems II: Express Briefs.

[6]  Tatsuya Hirose,et al.  A 54-GHz distributed amplifier with 6-VPP output for a 40-Gb/s LiNbO3 modulator driver , 2002, IEEE J. Solid State Circuits.

[7]  Thomas Wong,et al.  Fundamentals of distributed amplification , 1993 .

[8]  Yu-Jiu Wang,et al.  A compact low-noise weighted distributed amplifier in CMOS , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[9]  Gholamreza Nikandish,et al.  Unilateralization of MMIC Distributed Amplifiers , 2014, IEEE Transactions on Microwave Theory and Techniques.

[10]  James F. Buckwalter,et al.  Supply-Scaling for Efficiency Enhancement in Distributed Power Amplifiers , 2016, IEEE Journal of Solid-State Circuits.

[11]  C.F. Campbell,et al.  A GaAs MHEMT distributed amplifier with 300-GHz gain-bandwidth product for 40-Gb/s optical applications , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[12]  Jiashu Chen,et al.  Design and Analysis of a Stage-Scaled Distributed Power Amplifier , 2011, IEEE Transactions on Microwave Theory and Techniques.

[13]  P. Saunier,et al.  A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

[14]  Corrado Carta,et al.  170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier , 2014, IEEE Journal of Solid-State Circuits.

[15]  Yu-Cheng Liu,et al.  Design and Analysis of a DC–43.5-GHz Fully Integrated Distributed Amplifier Using GaAs HEMT–HBT Cascode Gain Stage , 2011, IEEE Transactions on Microwave Theory and Techniques.