论文信息 - Three-dimensional magnetic-field sensors

Three-dimensional magnetic-field sensors

Devices sensitive to all three components of a magnetic-field vector are presented. The sensitivity to two field components in the plane of the chip is achieved by merging two one-dimensional vertical magnetotransistors positioned at a 90 degrees angle to each other. An additional surface-collector pair makes this device also sensitive to the last field component, which is perpendicular to the plane of the chip. The sensitivity of the 3-D sensor is represented by a nondiagonal sensitivity-matrix. The smallest achieved sensitive volume is (6*10*16) mu m/sup 3/, which is limited by the design tolerances. The elements of the sensitivity matrix of the device are discussed along with the parameters that influence them. The influence of additional collector pairs on the sensitivity is also discussed. Several 3-D sensitive structures are presented, including magnetotransistor and resistive structures. >

P.J.A. Munter | S. Kordic | P. Munter | S. Kordic

[1] R. Popovic,et al. The vertical hall-effect device , 1984, IEEE Electron Device Letters.

[2] E. Putley,et al. A Hall effect device for measuring the magnitude and direction of a magnetic field at 4°K , 1966 .

[3] S. Kordic. Integrated 3-D Magnetic sensor based on an n-p-n transistor , 1986, IEEE Electron Device Letters.

[4] V. Zieren. A new silicon micro-transducer for the measurement of the magnitude and direction of a magnetic-field vector , 1980, 1980 International Electron Devices Meeting.

[5] H. Baltes,et al. Integrated semiconductor magnetic field sensors , 1986, Proceedings of the IEEE.

[6] S. Kordić,et al. Integrated silicon magnetic-field sensors , 1986 .

[7] S. Kordic. Sensitivity of the silicon high-resolution 3-dimensional magnetic-field vector sensor , 1986, 1986 International Electron Devices Meeting.