Raman scattering from AlGaInP

Raman scattering spectra from AlGaInP quaternary alloys grown on GaAs substrates are measured. Dominant peaks observed are identified as AlP‐, GaP‐, and InP‐like longitudinal optical modes. Mode frequency is seen to change almost linearly with aluminum composition, exhibiting the ‘‘partly three‐mode type’’ behavior.

[1]  N. Kekelidze,et al.  Lattice vibrations of AsxP1−xIn solid solutions , 1973 .

[2]  Y.-S. Chen,et al.  Lattice vibration spectra of GaAsxP1-x single crystals , 1965 .

[3]  Kohroh Kobayashi,et al.  Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature , 1986 .

[4]  T. Inoshita.  Long‐wavelength lattice dynamics of In1−xGaxAsyP1−y alloys , 1984 .

[5]  M. Ikeda,et al.  MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphine , 1986 .

[6]  Akiko Gomyo,et al.  MOCVD-Grown Al0.5In0.5P–Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 K , 1982 .

[7]  M. Ishikawa,et al.  Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers , 1986 .

[8]  B. Jusserand,et al.  Evidence by Raman scattering on In1−xGaxAsyP1−y of the two-mode behaviour of In1−xGaxP , 1984 .

[9]  M. Balkanski,et al.  Raman detection of phonon-phonon coupling in GaxIn1−xP , 1976 .

[10]  Haruo Nagai,et al.  Molecular beam epitaxial growth of InGaAlP on (100) GaAs , 1982 .

[11]  R. Nicholas,et al.  Raman scattering in InP1-xAsx alloys , 1980 .

[12]  A. S. Barker,et al.  Optical studies of the vibrational properties of disordered systems , 1975 .

[13]  A. S. Barker,et al.  Infrared Lattice Vibrations in GaAsyP1-y Alloys , 1966 .

[14]  G. Lucovsky,et al.  Long-Wavelength Optical Phonons in Ga1-xInxP , 1971 .

[15]  A. M. Andrews,et al.  Tunnel Mechanisms and Junction Characterization in III-V Tunnel Diodes , 1972 .