Microelectronics reliability : physics-of-failure based modeling and lifetime evaluation

[1]  J. Black.  Mass Transport of Aluminum by Momentum Exchange with Conducting Electrons , 1967 .

[2]  A. S. Grove,et al.  Characteristics of the Surface‐State Charge (Qss) of Thermally Oxidized Silicon , 1967 .

[3]  R. J. Strain,et al.  On the Formation of Surface States during Stress Aging of Thermal Si ‐ SiO2 Interfaces , 1973 .

[4]  B. E. Deal.  The Current Understanding of Charges in the Thermally Oxidized Silicon Structure , 1974 .

[5]  J. F. Verwey,et al.  Mean free path of hot electrons at the surface of boron‐doped silicon , 1975 .

[6]  K. Jeppson,et al.  Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices , 1977 .

[7]  Theodore I. Kamins,et al.  Device Electronics for Integrated Circuits , 1977 .

[8]  Tak H. Ning,et al.  Emission probability of hot electrons from silicon into silicon dioxide , 1977 .

[9]  James R. Lloyd,et al.  On the log‐normal distribution of electromigration lifetimes , 1979 .

[10]  E. Takeda,et al.  An empirical model for device degradation due to hot-carrier injection , 1983, IEEE Electron Device Letters.

[11]  C. Hu,et al.  Lucky-electron model of channel hot-electron injection in MOSFET'S , 1984 .

[12]  G. Haller,et al.  Bias‐temperature stress on metal‐oxide‐semiconductor structures as compared to ionizing irradiation and tunnel injection , 1984 .

[13]  Fischetti.  Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode. , 1985, Physical review. B, Condensed matter.

[14]  Chingchi Yao,et al.  Temperature Dependence of CMOS Device Reliability , 1986, 24th International Reliability Physics Symposium.

[15]  Michael Pecht,et al.  A critique of Mil-Hdbk-217E reliability prediction methods , 1988 .

[16]  Werner Weber,et al.  Dynamic stress experiments for understanding hot-carrier degradation phenomena , 1988 .

[17]  James Stasiak,et al.  Trap creation in silicon dioxide produced by hot electrons , 1989 .

[18]  James A. McLinn,et al.  Constant failure rate - a paradigm in transition? , 1990 .

[19]  Chenming Hu,et al.  The effects of hot-electron degradation on analog MOSFET performance , 1990, International Technical Digest on Electron Devices.

[20]  A. Scorzoni,et al.  Electromigration in thin-film interconnection lines: models, methods and results , 1991 .

[21]  Elyse Rosenbaum,et al.  A new approach for simulation of circuit degradation due to hot-electron damage in NMOSFETs , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[22]  M. J. Lakey.  Statistical analysis of field data for aircraft warranties , 1991, Annual Reliability and Maintainability Symposium. 1991 Proceedings.

[23]  J. B. Bowles,et al.  A survey of reliability-prediction procedures for microelectronic devices , 1992 .

[24]  Sung-Mo Kang,et al.  Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradation , 1992, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[25]  Chenming Hu,et al.  A new bi-directional PMOSFET hot-carrier degradation model for circuit reliability simulation , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[26]  N. Shiono,et al.  A lifetime projection method using series model and acceleration factors for TDDB failures of thin gate oxides , 1993, 31st Annual Proceedings Reliability Physics 1993.

[27]  Sung-Mo Kang,et al.  Modeling and simulation of hot-carrier-induced device degradation in MOS circuits , 1993 .

[28]  M. Fukuma,et al.  Memory LSI reliability , 1993, Proc. IEEE.

[29]  Y. Homma,et al.  Dependence of electromigration lifetime on the square of current density , 1993, 31st Annual Proceedings Reliability Physics 1993.

[30]  Boon-Khim Liew,et al.  Circuit reliability of hot electron induced degradation in high speed CMOS SRAM , 1993, Proceedings of IEEE Custom Integrated Circuits Conference - CICC '93.

[31]  S. F. Morris,et al.  MIL-HDBK-217-A favorite target , 1993, Annual Reliability and Maintainability Symposium 1993 Proceedings.

[32]  Elyse Rosenbaum,et al.  A bidirectional NMOSFET current reduction model for simulation of hot-carrier-induced circuit degradation , 1993 .

[33]  M. J. Cushing,et al.  Comparison of electronics-reliability assessment approaches , 1993 .

[34]  C. Hu,et al.  Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation , 1994 .

[35]  Michael Pecht,et al.  Predicting the reliability of electronic equipment , 1994 .

[36]  Aristos Christou,et al.  Failure mechanism models for electromigration , 1994 .

[37]  Peng Fang,et al.  Hot-carrier-reliability design rules for translating device degradation to CMOS digital circuit degradation , 1994 .

[38]  Ibrahim N. Hajj,et al.  iProbe-d: a hot-carrier and oxide reliability simulator , 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.

[39]  Jan M. Rabaey,et al.  Digital Integrated Circuits: A Design Perspective , 1995 .

[40]  Antonio Rubio,et al.  A detailed analysis of GOS defects in MOS transistors: testing implications at circuit level , 1995, Proceedings of 1995 IEEE International Test Conference (ITC).

[41]  Nam Hwang,et al.  Hot-carrier induced series resistance enhancement model (HISREM) of nMOSFET's for circuit simulations and reliability projections , 1995 .

[42]  Ogawa,et al.  Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2 interface. , 1995, Physical review. B, Condensed matter.

[43]  Teong-San Yeoh,et al.  Gate oxide breakdown model in MOS transistors , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

[44]  A. Oates,et al.  Electromigration failure distribution of contacts and vias as a function of stress conditions in submicron IC metallizations , 1996, Proceedings of International Reliability Physics Symposium.

[45]  Antonio Rubio,et al.  A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors , 1996, J. Electron. Test..

[46]  Ramesh Karri,et al.  Electromigration reliability enhancement via bus activity distribution , 1996, DAC '96.

[47]  J. F. Verweij,et al.  Dielectric breakdown I: A review of oxide breakdown , 1996 .

[48]  D. Vuillaume,et al.  Hot-Carrier Reliability in n-MOSFET's Used as Pass-Transistors , 1996, ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference.

[49]  J. Segura,et al.  A detailed analysis of CMOS SRAM's with gate oxide short defects , 1997, IEEE J. Solid State Circuits.

[50]  D. G. Pierce,et al.  Electromigration: A review , 1997 .

[51]  A. Narr,et al.  Lifetime prediction for PMOS and NMOS devices based on a degradation model for gate-bias-stress , 1997 .

[52]  E. Sangiorgi.  Historical perspective and recent developments of hot-carrier generation modeling for device analysis , 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

[53]  Teong-San Yeoh,et al.  Influence of MOS transistor gate oxide breakdown on circuit performance , 1998, ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187).

[54]  Pedro J. Gil,et al.  Fault injection into VHDL models: analysis of the error syndrome of a microcomputer system , 1998, Proceedings. 24th EUROMICRO Conference (Cat. No.98EX204).

[55]  S. Mourad,et al.  Gate to channel shorts in PMOS devices: effects on logic gate failures , 1998, ISCAS '98. Proceedings of the 1998 IEEE International Symposium on Circuits and Systems (Cat. No.98CH36187).

[56]  Simon Deleonibus,et al.  A new hot carrier degradation law for MOSFET lifetime prediction , 1998 .

[57]  G. P. Li,et al.  Negative bias instability in silicon-on-sapphire n-channel MOSFETs , 1998, 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).

[58]  W. Denson,et al.  The history of reliability prediction , 1998 .

[59]  Guido Groeseneken,et al.  New insights in the relation between electron trap generation and the statistical properties of oxide breakdown , 1998 .

[60]  Andrew Masami Abo,et al.  Design for Reliability of Low-voltage, Switched-capacitor Circuits , 1999 .

[61]  C. Hu,et al.  A unified gate oxide reliability model , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

[62]  J. Stathis.  Percolation models for gate oxide breakdown , 1999 .

[63]  B. Agarwala,et al.  Scaling effect on electromigration in on-chip Cu wiring , 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

[64]  Ernest Y. Wu,et al.  Challenges for accurate reliability projections in the ultra-thin oxide regime , 1999, 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).

[65]  Guido Groeseneken,et al.  Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction , 1999 .

[66]  Guido Groeseneken,et al.  Hot carrier degradation and time-dependent dielectric breakdown in oxides , 1999 .

[67]  A. von Glasow,et al.  Experimental data and statistical models for bimodal EM failures , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

[68]  E. Rosenbaum,et al.  On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing , 2000, IEEE Electron Device Letters.

[69]  Ralf Brederlow,et al.  MOS transistor reliability under analog operation , 2000 .

[70]  P. Chaparala,et al.  Threshold voltage drift in PMOSFETS due to NBTI and HCI , 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).

[71]  Elyse Rosenbaum,et al.  Anode hole injection versus hydrogen release: the mechanism for gate oxide breakdown , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

[72]  E. Vandamme,et al.  Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability , 2000 .

[73]  R. Degraeve,et al.  Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications , 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

[74]  A. De Keersgieter,et al.  Consistent model for short-channel nMOSFET post-hard-breakdown characteristics , 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

[75]  Paul S. Ho,et al.  Statistics of electromigration early failures in Cu/oxide dual-damascene interconnects , 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

[76]  Gerard Ghibaudo,et al.  Time to breakdown and voltage to breakdown modeling for ultra-thin oxides (Tox<32/spl Aring/) , 2001, 2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580).

[77]  Asad A. Abidi,et al.  A 6 b 1.3 GSample/s A/D converter in 0.35 μm CMOS , 2001 .

[78]  Jordi Suñé,et al.  Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides , 2001 .

[79]  Y. P. Wang,et al.  A study of bimodal distributions of time-to-failure of copper via electromigration , 2001, 2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517).

[80]  Yee-Chia Yeo,et al.  MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications , 2001 .

[81]  Guido Groeseneken,et al.  Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications , 2001 .

[82]  Ronald D. Schrimpf,et al.  Proton-induced defect generation at the Si-SiO/sub 2/ interface , 2001 .

[83]  William Liu,et al.  MOSFET Models for SPICE Simulation: Including BSIM3v3 and BSIM4 , 2001 .

[84]  J. Stathis.  Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits , 2001 .

[85]  Hisao Kawasaki,et al.  Statistical analysis of early failures in electromigration , 2001 .

[86]  J. Stathis,et al.  Physical models of ultra thin oxide reliability in CMOS devices and implications for circuit reliability , 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

[87]  Fausto Fantini,et al.  A percolative approach to electromigration in metallic lines , 2001 .

[88]  Ernest Y. Wu,et al.  On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques , 2002 .

[89]  R. Degraeve,et al.  Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits , 2002, Digest. International Electron Devices Meeting,.

[90]  J. Suehle.  Ultrathin gate oxide reliability: physical models, statistics, and characterization , 2002 .

[91]  Edward J. Nowak,et al.  CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics , 2002, IBM J. Res. Dev..

[92]  J. Stathis,et al.  The impact of gate-oxide breakdown on SRAM stability , 2002, IEEE Electron Device Letters.

[93]  Jordi Suñé,et al.  On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress conditions , 2002 .

[94]  Guido Groeseneken,et al.  Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study , 2002, Microelectron. Reliab..

[95]  James H. Stathis,et al.  Reliability limits for the gate insulator in CMOS technology , 2002, IBM J. Res. Dev..

[96]  G. Ghibaudo,et al.  A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

[97]  D. Das,et al.  A review of reliability prediction methods for electronic devices , 2002, Microelectron. Reliab..

[98]  R. Degraeve,et al.  Consistent model for short-channel nMOSFET after hard gate oxide breakdown , 2002 .

[99]  Jordi Suñé,et al.  Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides , 2002 .

[100]  Jean Marc Gallière,et al.  Modeling gate oxide short defects in CMOS minimum transistors , 2002, Proceedings The Seventh IEEE European Test Workshop.

[101]  D. Kwong,et al.  Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling , 2002, IEEE Electron Device Letters.

[102]  Shin Min Kang,et al.  CMOS Digital Integrated Cir-cuits: Analysis and Design , 2002 .

[103]  Israel Koren,et al.  Fault-sensitivity analysis and reliability enhancement of analog-to-digital converters , 2003, IEEE Trans. Very Large Scale Integr. Syst..

[104]  Florence Azaïs,et al.  Delay testing of MOS transistor with gate oxide short , 2003, 2003 Test Symposium.

[105]  W. Abadeer,et al.  Behavior of NBTI under AC dynamic circuit conditions , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[106]  Yi Liu,et al.  Effect of gate-oxide breakdown on RF performance , 2003 .

[107]  Barry P. Linder,et al.  Circuit implications of gate oxide breakdown , 2003, Microelectron. Reliab..

[108]  J. Stathis,et al.  A model for gate-oxide breakdown in CMOS inverters , 2003, IEEE Electron Device Letters.

[109]  Y. Mitsui,et al.  Failure analysis of 6T SRAM on low-voltage and high-frequency operation , 2003 .

[110]  S. John,et al.  NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] , 2003, IEEE International Electron Devices Meeting 2003.

[111]  N. Mielke,et al.  Universal recovery behavior of negative bias temperature instability [PMOSFETs] , 2003, IEEE International Electron Devices Meeting 2003.

[112]  E. Augendre,et al.  Experimental verification of SRAM cell functionality after hard and soft gate oxide breakdowns , 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

[113]  Duc Minh Nguyen,et al.  A reliability evaluation methodology for memory chips for space applications when sample size is small , 2003, IEEE International Integrated Reliability Workshop Final Report, 2003.

[114]  G. Ribes,et al.  New insights into the change of voltage acceleration and temperature activation of oxide breakdown , 2003, Microelectron. Reliab..

[115]  Jinhong Yuan,et al.  Effect of gate oxide breakdown on RF device and circuit performance , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[116]  D. Schroder,et al.  Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing , 2003 .

[117]  Joerg D Walter.  Methods to Account for Accelerated Semi-Conductor Device Wearout in Longlife Aerospace Applications , 2003 .

[118]  R. Digout,et al.  The right way to assess electronic system reliability: FIDES , 2003, Microelectron. Reliab..

[119]  R. Rodriguez,et al.  Oxide breakdown model and its impact on SRAM cell functionality , 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..

[120]  Karl Goser,et al.  On the degradation of p-MOSFETs in analog and RF circuits under inhomogeneous negative bias temperature stress , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[121]  A. Avellan,et al.  Impact of soft and hard breakdown on analog and digital circuits , 2004, IEEE Transactions on Device and Materials Reliability.

[122]  John M. Carulli,et al.  Impact of negative bias temperature instability on product parametric drift , 2004, 2004 International Conferce on Test.

[123]  Weiping Shi,et al.  A circuit level fault model for resistive shorts of MOS gate oxide , 2004, Fifth International Workshop on Microprocessor Test and Verification (MTV'04).

[124]  H. Puchner,et al.  NBTI reliability analysis for a 90 nm CMOS technology , 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

[125]  Pradip Bose,et al.  The case for lifetime reliability-aware microprocessors , 2004, Proceedings. 31st Annual International Symposium on Computer Architecture, 2004..

[126]  T. Ning,et al.  A model for negative bias temperature instability (NBTI) in oxide and high κ pFETs , 2004, VLSIT 2004.

[127]  M.A. Alam,et al.  Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs , 2004, IEEE Transactions on Electron Devices.

[128]  M. Agostinelli,et al.  PMOS NBTI-induced circuit mismatch in advanced technologies , 2004 .

[129]  V. Reddy,et al.  A comprehensive framework for predictive modeling of negative bias temperature instability , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[130]  David Blaauw,et al.  Gate oxide leakage current analysis and reduction for VLSI circuits , 2004, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[131]  S. Zafar.  Statistical mechanics based model for negative bias temperature instability induced degradation , 2005 .

[132]  J.J. Marin,et al.  Experience report on the FIDES reliability prediction method , 2005, Annual Reliability and Maintainability Symposium, 2005. Proceedings..

[133]  Sarita V. Adve,et al.  Exploiting Structural Duplication for Lifetime Reliability Enhancement , 2005, ISCA 2005.

[134]  Ananth Somayaji Goda,et al.  Design for degradation: CAD tools for managing transistor degradation mechanisms , 2005, Sixth international symposium on quality electronic design (isqed'05).

[135]  Steve Jacobs,et al.  The impact of PMOST bias-temperature degradation on logic circuit reliability performance , 2005, Microelectron. Reliab..

[136]  Xiaojun Li,et al.  Simulating and improving microelectronic device reliability by scaling voltage and temperature , 2005, Sixth international symposium on quality electronic design (isqed'05).

[137]  Srikanth Krishnan,et al.  Impact of negative bias temperature instability on digital circuit reliability , 2005, Microelectron. Reliab..

[138]  Karl Goser,et al.  Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits , 2005, Microelectron. Reliab..

[139]  X. Zhang,et al.  Deep submicron CMOS integrated circuit reliability simulation with SPICE , 2005, Sixth international symposium on quality electronic design (isqed'05).

[140]  S. Minehane,et al.  Degradation dynamics, recovery, and characterization of negative bias temperature instability , 2005, Microelectron. Reliab..

[141]  Jordi Suñé,et al.  Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability , 2005, Microelectron. Reliab..

[142]  T.J. Anderson,et al.  Modeling & Monitoring of Product DPPM with Multiple Fail Modes , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[143]  Yung-Huei Lee,et al.  Prediction of Logic Product Failure Due To Thin-Gate Oxide Breakdown , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[144]  Xiaojun Li,et al.  SRAM circuit-failure modeling and reliability simulation with SPICE , 2006, IEEE Transactions on Device and Materials Reliability.

[145]  W. Bornstein,et al.  Field Degradation of Memory Components from Hot Carriers , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[146]  M. Denais,et al.  NBTI degradation: From physical mechanisms to modelling , 2006, Microelectron. Reliab..

[147]  R. Rosenberg,et al.  Electromigration of Cu/low dielectric constant interconnects , 2006, Microelectron. Reliab..