Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature

The electronic conduction through a ${\mathrm{Pr}}_{0.7}{\mathrm{Ca}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}$ thin film is investigated by measurements using dc and pulsed biases. Semiconducting ${\mathrm{Pr}}_{0.7}{\mathrm{Ca}}_{0.3}\mathrm{Mn}{\mathrm{O}}_{3}$ films sandwiched by electrodes show both hysteretic and asymmetric behaviors in current-voltage characteristics. The observed conduction characteristics exhibit the space-charge-limited-current effect, and the hysteretic behavior can be ascribed to a carrier trapping and detrapping of the trap sites in the manganite. The hysteresis induces a colossal electroresistance (CER) of more than 5000% at room temperature. The CER ratio is independent of the duration time of pulses from an infinite (dc) down to $150\phantom{\rule{0.3em}{0ex}}\mathrm{ns}$, indicating that the carrier filling of all the traps can be completed within a short time.

[1]  M. Rozenberg,et al.  Nonvolatile memory with multilevel switching: a basic model. , 2004, Physical review letters.

[2]  Tx,et al.  Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface , 2002, cond-mat/0212464.

[3]  Switching effect perpendicular to the plane of Pr0.5Ca0.5MnO3−y thin films , 2001 .

[4]  C. Gerber,et al.  Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .

[5]  D. Bremaud,et al.  Electrical current distribution across a metal–insulator–metal structure during bistable switching , 2001, cond-mat/0104452.

[6]  Takashi Hotta,et al.  Colossal Magnetoresistant Materials: The Key Role of Phase Separation , 2000, cond-mat/0012117.

[7]  C. Gerber,et al.  Reproducible switching effect in thin oxide films for memory applications , 2000 .

[8]  S. Q. Liu,et al.  Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .

[9]  Masatoshi Imada,et al.  Metal-insulator transitions , 1998 .

[10]  H. Kuwahara,et al.  Current switching of resistive states in magnetoresistive manganites , 1997, Nature.

[11]  Kuwahara,et al.  Magnetic-field-induced metal-insulator phenomena in Pr1-xCaxMnO3 with controlled charge-ordering instability. , 1996, Physical review. B, Condensed matter.

[12]  Yelon,et al.  Origin and consequences of the compensation (Meyer-Neldel) law. , 1992, Physical review. B, Condensed matter.

[13]  H. Fritzsche,et al.  Attempts to measure thermally stimulated currents in chalcogenide glasses , 1974 .

[14]  I. Emmer,et al.  Conducting filaments and voltage-controlled negative resistance in Al-Al2O3-Au structures with amorphous dielectric , 1974 .