Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature
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Hideaki Adachi | Hirofumi Sato | Y. Tokura | Hiroshi Akoh | Akihiro Odagawa | Y. Tokura | H. Adachi | Hirofumi Sato | I. Inoue | H. Akoh | M. Kawasaki | A. Odagawa | T. Kanno | Tsutomu Kanno | Isao H. Inoue | M. Kawasaki | A. Odagawa
[1] M. Rozenberg,et al. Nonvolatile memory with multilevel switching: a basic model. , 2004, Physical review letters.
[2] Tx,et al. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface , 2002, cond-mat/0212464.
[3] Switching effect perpendicular to the plane of Pr0.5Ca0.5MnO3−y thin films , 2001 .
[4] C. Gerber,et al. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .
[5] D. Bremaud,et al. Electrical current distribution across a metal–insulator–metal structure during bistable switching , 2001, cond-mat/0104452.
[6] Takashi Hotta,et al. Colossal Magnetoresistant Materials: The Key Role of Phase Separation , 2000, cond-mat/0012117.
[7] C. Gerber,et al. Reproducible switching effect in thin oxide films for memory applications , 2000 .
[8] S. Q. Liu,et al. Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .
[9] Masatoshi Imada,et al. Metal-insulator transitions , 1998 .
[10] H. Kuwahara,et al. Current switching of resistive states in magnetoresistive manganites , 1997, Nature.
[11] Kuwahara,et al. Magnetic-field-induced metal-insulator phenomena in Pr1-xCaxMnO3 with controlled charge-ordering instability. , 1996, Physical review. B, Condensed matter.
[12] Yelon,et al. Origin and consequences of the compensation (Meyer-Neldel) law. , 1992, Physical review. B, Condensed matter.
[13] H. Fritzsche,et al. Attempts to measure thermally stimulated currents in chalcogenide glasses , 1974 .
[14] I. Emmer,et al. Conducting filaments and voltage-controlled negative resistance in Al-Al2O3-Au structures with amorphous dielectric , 1974 .