论文信息 - High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon - 字舞流文

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

C. Fisher | P. Mawby | Y. Sharma | S. Thomas | D. Hamilton | M. Jennings | A. Pérez‐Tomás | S. Russell | F. Li