Size and shape dependent optical properties of InAs quantum dots

In this study Electronic states and optical properties of self assembled InAs quantum dots embedded in GaAs matrix have been investigated. Their carrier confinement energies for single quantum dot are calculated by time-independent Schrödinger equation in which hamiltonianian of the system is based on effective mass approximation and position dependent electron momentum. Transition energy, absorption coefficient, refractive index and high frequency dielectric constant for spherical, cylindrical and conical quantum dots with different sizes in different dimensions are calculated. Comparative studies have revealed that size and shape greatly affect the electronic transition energies and absorption coefficient. Peaks of absorption coefficients have been found to be highly shape dependent.

[1]  M. Sabaeian,et al.  Wetting layer-assisted modification of in-plane-polarized transitions in strain-free GaAs/AlGaAs quantum dots , 2014 .

[2]  Galina Khitrova,et al.  Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures , 2015 .

[3]  Y. Kayanuma,et al.  Quantum-size effects of interacting electrons and holes in semiconductor microcrystals with spherical shape. , 1988, Physical review. B, Condensed matter.

[4]  Jianliang Jiang,et al.  Numerical modeling of shape and size dependent intermediate band quantum dot solar cell , 2015, International Conference on Optical Instruments and Technology.

[5]  P. Holloway,et al.  Quantum Dots and Their Multimodal Applications: A Review , 2010, Materials.

[6]  Hassen Maaref,et al.  Evolution of inas/gaas QDs size with the growth rate: a numerical investigation , 2015 .

[7]  Piotr Martyniuk,et al.  Quantum-dot infrared photodetectors: Status and outlook , 2008 .

[8]  Gerhard Klimeck,et al.  Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots , 2004 .

[9]  M. Sabaeian,et al.  Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer. , 2012, Applied optics.

[10]  P. Smereka,et al.  Mechanisms of Stranski Krastanov Growth , 2011, 1101.3775.

[11]  M. Hopkinson,et al.  EXCITED STATES AND SELECTION RULES IN SELF-ASSEMBLED INAS/GAAS QUANTUM DOTS , 1999 .

[12]  Hassen Maaref,et al.  Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position , 2015, Materials.

[13]  Yik-Khoon Ee,et al.  Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes , 2009, IEEE Journal of Quantum Electronics.

[14]  Siddhartha Ghosh,et al.  QUANTUM DOT OPTO-ELECTRONIC DEVICES , 2004 .

[15]  K. Boujdaria,et al.  Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects , 2011 .

[16]  W. Sibbett,et al.  Amplification of femtosecond pulses over by 18 dB in a quantum-dot semiconductor optical amplifier , 2003, IEEE Photonics Technology Letters.

[17]  Seoung-Hwan Park,et al.  Spontaneous emission rate of green strain‐compensated InGaN/InGaN LEDs using InGaN substrate , 2011 .

[18]  H. Voss,et al.  Numerical simulation of electronic properties of coupled quantum dots on wetting layers , 2008, Nanotechnology.

[19]  Dieter Bimberg,et al.  Quantum size effect in self-organized InAs/GaAs quantum dots , 2000 .

[20]  J. S. Kim,et al.  Size distribution effects on self-assembled InAs quantum dots , 2007 .

[21]  O. Kurniawan,et al.  Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots , 2010, Numerical Simulation of Optoelectronic Devices.

[22]  R. Goldman,et al.  Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices , 2011 .

[23]  L.K.J. Vandamme,et al.  General relation between refractive index and energy gap in semiconductors , 1994 .

[24]  G. Guillot,et al.  Multi-exciton complexes in single InAs quantum dots grown on InP(001) substrate , 2005, International Conference on Indium Phosphide and Related Materials, 2005.

[25]  Louis E. Brus,et al.  Electronic wave functions in semiconductor clusters: experiment and theory , 1986 .

[26]  Wetting layers effect on InAs/GaAs quantum dots , 2012 .

[27]  Kiyoshi Kanisawa,et al.  Quantum dots with single-atom precision. , 2014, Nature nanotechnology.

[28]  W. Lu,et al.  Effects of Shape and Strain Distribution of Quantum Dots on Optical Transition in the Quantum Dot Infrared Photodetectors , 2008, Nanoscale research letters.

[29]  G. Medeiros-Ribeiro,et al.  Size quantization effects in InAs self-assembled quantum dots , 1997 .

[30]  N. Ledentsov,et al.  Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing , 1996 .

[31]  T. Yamauchi,et al.  Size dependence of the work function in InAs quantum dots on GaAs(001) as studied by Kelvin force probe microscopy , 2004 .

[32]  P. Holloway,et al.  High-efficiency light-emitting devices based on quantum dots with tailored nanostructures , 2013, Nature Photonics.

[33]  N. Bouarissa,et al.  Band parameters for cadmium and zinc chalcogenide compounds , 2009 .

[34]  S. Chua,et al.  Effects of size and shape on electronic states of quantum dots , 2006, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices.

[35]  Diana L. Huffaker,et al.  Effect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition , 2004 .