An Overview of Metallization Technologies for High Voltage and Smart-Power Applications
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[1] D. B. Fraser,et al. Electromigration Resistance of Fine-Line Al for VLSI Applications , 1980, 18th International Reliability Physics Symposium.
[2] Krishna Shenai,et al. A novel high-frequency power FET structure fabricated using LPCVD WSi/sub 2/ gate and LCPVD W source contact technology , 1988, Technical Digest., International Electron Devices Meeting.
[3] K. Shenai,et al. Modeling and characterization of dopant redistributions in metal and silicide contacts , 1985, IEEE Transactions on Electron Devices.
[4] K. Shenai,et al. Blanket LVD tungsten silicide technology for smart power applications , 1989, IEEE Electron Device Letters.
[5] S. P. Murarka,et al. Chapter VII – Special Applications , 1983 .
[6] Krishna Shenai,et al. Optimized silicon low-voltage power MOSFET's for high-frequency power conversion , 1989, 20th Annual IEEE Power Electronics Specialists Conference.
[7] M.S. Adler,et al. The evolution of power device technology , 1984, IEEE Transactions on Electron Devices.
[8] K. Shenai,et al. A 50-V, 0.7-m Omega *cm/sup 2/, vertical-power DMOSFET , 1989, IEEE Electron Device Letters.
[9] K. Shenai,et al. High-performance vertical-power DMOSFETs with selectively silicided gate and source regions , 1989, IEEE Electron Device Letters.
[10] Krishna Shenai,et al. Formation and properties of rapid thermally annealed TiSi2 on lightly doped and heavily implanted silicon , 1988 .
[11] B. J. Baliga,et al. Modern Power Devices , 1987 .
[12] P. Ghate,et al. Electromigration-Induced Failures in VLSI Interconnects , 1982, 20th International Reliability Physics Symposium.
[13] Shyam P Murarka,et al. Silicides for VLSI Applications , 1983 .