Channel noise modeling of deep submicron MOSFETs

This brief presents a new channel noise model using the channel length modulation (CLM) effect to calculate the channel noise of deep submicron MOSFETs. Based on the new channel noise model, the simulated noise spectral densities of the devices fabricated in a 0.18 /spl mu/m CMOS process as a function of channel length and bias condition are compared to the channel noise directly extracted from RF noise measurements. In addition, the hot electron effect and the noise contributed from the velocity saturation region are discussed.

[1]  D.B.M. Klaassen,et al.  Accurate thermal noise model for deep-submicron CMOS , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[2]  M. J. Deen,et al.  MOSFET modeling for low noise, RF circuit design , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).

[3]  M. Deen,et al.  Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements , 2001 .

[4]  J. Nougier.  Fluctuations and noise of hot carriers in semiconductor materials and devices , 1994 .

[5]  G. Knoblinger,et al.  A new model for thermal channel noise of deep submicron MOSFETs and its application in RF-CMOS design , 2000, 2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103).

[6]  T.H. Lee,et al.  A 1.5 V, 1.5 GHz CMOS low noise amplifier , 1996, 1996 Symposium on VLSI Circuits. Digest of Technical Papers.

[7]  A. van der Ziel,et al.  H.F. thermal noise in space-charge-limited solid-state diodes☆ , 1966 .

[8]  S. G. Chamberlain,et al.  A compact thermal noise model for the investigation of soft error rates in MOS VLSI digital circuits , 1989 .

[9]  Young June Park,et al.  Modeling of thermal noise in short-channel MOSFETs at saturation , 2000 .

[10]  M. J. Deen,et al.  High frequency noise of MOSFETs. II. Experiments , 1998 .

[11]  P. Klein,et al.  An analytical thermal noise model of deep submicron MOSFET's , 1999, IEEE Electron Device Letters.

[12]  S. T. Liu.  Thermal noise in space-charge-limited solid state diodes☆ , 1967 .

[13]  A. van der Ziel,et al.  Thermal noise in the hot electron regime in FET's , 1971 .

[14]  Jack Lau,et al.  A physical thermal noise model for SOI MOSFET , 2000 .

[15]  A. Birbas,et al.  Thermal noise modeling for short-channel MOSFETs , 1996 .

[16]  M. Fukuma,et al.  Effects of the velocity saturated region on MOSFET characteristics , 1994 .

[17]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[18]  M. J. Deen,et al.  A new 1/f noise model for metal‐oxide‐semiconductor field‐effect transistors in saturation and deep saturation , 1992 .

[19]  Hermann A. Haus,et al.  Noise characteristics of gallium arsenide field-effect transistors , 1974 .

[20]  M. J. Deen,et al.  High frequency noise of MOSFETs I Modeling , 1998 .

[21]  A. Ziel.  Noise in solid state devices and circuits , 1986 .

[22]  M. J. Deen,et al.  Extraction of the induced gate noise, channel thermal noise and their correlation in sub-micron MOSFETs from RF noise measurements , 2001, ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153).