Fundamental study of extreme UV resist line edge roughness: Characterization, experiment, and modeling
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K. Virwani | G. Wallraff | W. Hinsberg | K. Petrillo | H. Truong | J. Pitera | L. Bozano | R. Ayothi | L. Singh | Y. Hishiro | L. Sundberg | M. Sanchez | N. Arellano | Yueming Hua
[1] Steve Plimpton,et al. Fast parallel algorithms for short-range molecular dynamics , 1993 .
[2] Martha I. Sanchez,et al. Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance , 1998 .
[3] F. Cerrina,et al. Process dependence of roughness in a positive-tone chemically amplified resist , 1998 .
[4] James W. Taylor,et al. Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography , 1999 .
[5] Martha I. Sanchez,et al. Kinetic Model for Positive Tone Resist Dissolution and Roughening , 2002 .
[6] Martha I. Sanchez,et al. Extendibility of chemically amplified resists: another brick wall? , 2003, SPIE Advanced Lithography.
[7] Jonathan L. Cobb,et al. Current Status of EUV Photoresists , 2003 .
[8] Jonathan L. Cobb,et al. Statistical limitations of printing 50 and 80 nm contact holes by EUV lithography , 2003 .
[9] Gregg M. Gallatin,et al. Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes , 2004 .
[10] Roger F. Sinta,et al. Deconstructing the resist to probe innate material roughness , 2006, SPIE Advanced Lithography.
[11] Harry J. Levinson,et al. Line edge roughness impact on critical dimension variation , 2007, SPIE Advanced Lithography.
[12] Patrick P. Naulleau,et al. Spatial scaling metrics of mask-induced line-edge roughness , 2008 .
[13] P. Faurie,et al. The LER/LWR metrology challenge for advance process control through 3D-AFM and CD-SEM , 2009, Lithography Asia.
[14] C. W. Hagen,et al. Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art , 2009, Nanotechnology.
[15] Chris A. Mack. Stochastic approach to modeling photoresist developmenta) , 2009 .
[16] Julius Joseph Santillan,et al. Alternative developer solutions for extreme ultraviolet resist , 2009 .
[17] Vivek M. Prabhu,et al. Architectural Effects on Acid Reaction-Diffusion Kinetics in Molecular Glass Photoresists , 2010 .
[18] Roel Gronheid. Impact of development chemistry on extreme ultraviolet resist performance , 2010 .
[19] Joseph Kennedy,et al. Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films , 2010, Advanced Lithography.
[20] Linda K. Sundberg,et al. A method to characterize pattern density effects: chemical flare and develop loading , 2010, Advanced Lithography.
[21] Julius Joseph Santillan,et al. In situ Characterization of Photoresist Dissolution , 2010 .
[22] Patrick Naulleau. EUV Resists: Illuminating the challenges , 2011 .
[23] Yueming Hua,et al. New three-dimensional AFM for CD measurement and sidewall characterization , 2011, Advanced Lithography.
[24] Alan C. Thomas,et al. Assessment of negative tone development challenges , 2012, Other Conferences.