论文信息 - Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs - 字舞流文

Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

P. Hazdra | J. Oswald | A. Hospodková | J. Pangrác | E. Hulicius | V. Komarnitskyy | K. Kuldová