论文信息 - Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices - 字舞流文

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices

Yuming Zhang | Hongliang Lv | Qingwen Song | Yimen Zhang | Ling Li | Zhao Yanli | Yifan Jia | Y. Niu | Cheng-Wei Li | Li Xiao | Liangyong Wang | Guangming Tang | Xiaoyan Tang