Mass production of GaAs based optoelectronic devices in an AIX 2600G3 reactor in the 49x2 inch configuration

The mass production of optoelectronic devices such as light emitting diodes (LED) requires the continuous improvement and expansion of the epitaxy-tool manufacturer's product portfolio. The main driving force is the reduction of costs for the LED chips, hence a low cost-of-ownership (CoO) of the expitaxy system while maintaining the high yield necessary for mass production is the key to achieving this goal. Since the optoelectronics industry is mainly using existing 2 inch process lines, we expanded the AIX 2600G3 reactor for the growth of 49 wafers in a single run. Extensive numerical modelling using computational fluid dynamics (CFD) was employed in the design process of the reactor chamber to pre-determine the growth process regime and checked against experimental results of AlInGaP light emitting diode (LED) related structures emitting in the amber spectral range. Wafer to wafer standard distributions of the wafer-averaged wavelength of 0.5 nm were found. The standard deviations of the wavelength uniformity on wafer were in the range of 2 nm.