论文信息 - Full Band Atomistic Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing

Full Band Atomistic Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing

A homo-junction In0.53Ga0.47As tunneling diode is investigated using full-band, atomistic quantum transport approach based on a tight-binding model (TB) and the non-equilibrium Green’s function formalism. Band gap narrowing (BGN) is included in TB by altering its parameters using the Jain-Roulston model [S. C. Jain and D. J. Roulston, Solid-State Electron. 34, 453 (1991)]. BGN is found to be critical in the determination of the current peak and the second turn-on in the forward bias region. Empirical excess current that mimics additional recombination paths must be added to the calculation to model the diode behavior in the valley current region. Overall, the presented model reproduces experimental data well.

[1] K. Kreher. Doping in III — V Semiconductors , 1995 .

[2] M. Luisier,et al. Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling , 2010 .

[3] David J. Roulston,et al. A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers , 1991 .

[4] G. Klimeck,et al. Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors , 2009, IEEE Electron Device Letters.

[5] Peter M. Asbeck,et al. Physical modeling of degenerately doped compound semiconductors for high-performance HBT design , 2006 .

[6] D. K. Roy. On the prediction of tunnel diode I–V characteristics , 1971 .

[7] R. A. Logan,et al. Excess Tunnel Current in Silicon Esaki Junctions , 1961 .

[8] W. Fichtner,et al. Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations , 2006 .

[9] E. Kane. Theory of Tunneling , 1961 .

[10] J. López-González,et al. The importance of bandgap narrowing distribution between the conduction and valence bands in abrupt HBTs , 1997 .