论文信息 - Electrical and Optical Characteristics of a Schottky Barrier on a Cleaved Surface of the Layered Semiconductor InSe

Electrical and Optical Characteristics of a Schottky Barrier on a Cleaved Surface of the Layered Semiconductor InSe

Forward current-voltage characteristics at various temperatures and the frequency depencence of barrier capacitance in Au/InSe Schottky barrier diodes are investigated in detail. The origin of an excess temperature T0 and the effect of electron traps on the barrier capacitance are discussed. Strom-Spannungscharakteristiken bei verschiedenen Temperaturen und die Frequenzabhangigkeit der Sperrschicht-Kapazitat von Au/InSe-Schottky-Dioden werden ausfuhrlich untersucht. Die Ursache der Rest-Temperatur T0 und der Einflus der Elektronenhaftstellen auf die Sperrschicht-Kapazitat werden diskutiert.

Y. Abe | Y. Hasegawa

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