A study of thin silicon dioxide films using infrared absorption techniques

Infrared transmission spectra of a series of silicon dioxide (SiO2) films grown on silicon wafers from a HCl and O2 gas mixture at 850 °C, have been studied for film thicknesses down to 28 A. The validity of Lambert‐Bouguer’s Law for such thin films has been confirmed, and the apparent absorption coefficient calculated for the absorption at 1065 cm−1 is in good agreement with previously published data for thicker, vapor‐deposited, and thermally grown films. A continuous shift of the absorption near 1065 cm−1 has been found, moving from an asymptotic limit maximum of ∼1070 cm−1 for thick films towards smaller wave numbers for thinner films. Various possibilities for the origin of this shift are discussed.

[1]  H. Philipp.  The infrared optical properties of SiO2 and SiO2 layers on silicon , 1979 .

[2]  T. Kawamura,et al.  Precipitation and redistribution of oxygen in Czochralski‐grown silicon , 1980 .

[3]  S. Hu.  Precipitation of oxygen in silicon: Some phenomena and a nucleation model , 1981 .

[4]  R. Newman,et al.  The solubility of carbon in pulled silicon crystals , 1971 .

[5]  Y. S. Liu,et al.  Rapid oxidation via adsorption of oxygen in laser‐induced amorphous silicon , 1981 .

[6]  W. Potts.  Chemical infrared spectroscopy , 1963 .

[7]  M. Palmer,et al.  Oxide Growth on Etched Silicon in Air at Room Temperature , 1975 .

[8]  J. Gannon,et al.  Silver‐Manganese Evaporated Ohmic Contacts to p‐type Gallium Arsenide , 1968 .

[9]  Y. Endo,et al.  INFRARED SPECTROPHOTOMETRY FOR CARBON IN SILICON AS CALIBRATED BY CHARGED PARTICLE ACTIVATION. , 1972 .

[10]  R. Newman,et al.  Vibrational absorption of carbon in silicon , 1964 .

[11]  G. D. Watkins,et al.  Absorption of oxygen in silicon in the near and the far infrared , 1970, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.

[12]  J. Wong,et al.  Submicron thickness calibration of vapor‐deposited SiO2 films by infrared spectroscopy , 1973 .

[13]  K. Graff,et al.  Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°K , 1973 .

[14]  W. A. Pliskin,et al.  Structural Evaluation of Silicon Oxide Films , 1965 .

[15]  L. I. Maissel,et al.  Properties of insulating thin films deposited by RF sputtering , 1967 .

[16]  R. J. Bell,et al.  The vibrational spectra of vitreous silica, germania and beryllium fluoride , 1968 .

[17]  W J Potts,et al.  Optimizing the operating parameters of infrared spectrometers. , 1967, Applied optics.

[18]  Tennyson Smith,et al.  Oxidation of n‐Type Silicon in the 10–1400‐Å Oxide Thickness Range , 1972 .

[19]  Y. S. Liu,et al.  Oxidation of Silicon by Ion-Implantation and Laser Irradiation , 1981 .

[20]  J. West,et al.  Laser-induced oxidation of silicon , 1981 .

[21]  J. Baker.  Determination of parts per billion of oxygen in silicon , 1970 .

[22]  M. Kamoshida,et al.  Precise Measurements of the Infrared Spectra near 9µm Obtained from RF-Sputtered Silicon Oxide (SiOX) Films , 1972 .

[23]  W. Kaiser,et al.  Oxygen Content of Silicon Single Crystals , 1957 .

[24]  W. A. Pliskin.  The evaluation of thin film insulators , 1967 .

[25]  Kenzo Sato.  The S‐Shift Curve Characteristics of Si‐O Stretching Band of Amorphous Silica , 1970 .

[26]  G. Hass,et al.  Optical Properties of Silicon Monoxide in the Wavelength Region from 0.24 to 14.0 Microns , 1954 .