High-efficiency and wide-band single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA base station application

In this paper, we present high drain efficiency of 34% and wide-band characteristics of single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA application. We also confirmed that GaN HEMT power amplifier has low memory effect and adjacent channel leakage power ratio (A.C.L.R.) is sufficiently reduced for the application by utilizing digital predistortion (D.P.D.) system.

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