论文信息 - A 10-Gbit/s high-speed monolithically integrated photoreceiver using InGaAs pin-PD and planar doped InAlAs/InGaAs HEMTs grown by metal organic vapor phase epitaxy - 字舞流文

A 10-Gbit/s high-speed monolithically integrated photoreceiver using InGaAs pin-PD and planar doped InAlAs/InGaAs HEMTs grown by metal organic vapor phase epitaxy

Y. Akatsu | J. Yoshida | Yuji Akahori | A. Kohzen

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