论文信息 - 3 Dimensional stacked pixel detector and sensor technology using less than 3-μmφ robust bump junctions

3 Dimensional stacked pixel detector and sensor technology using less than 3-μmφ robust bump junctions

This paper presents experimental results for a prototype pixel detector with 3.0-μmφ gold cone bumps fabricated by NpD (nanoparticle deposition) and Stacked CdTe/Si X-ray sensor TEG with gold cylindrical bumps fabricated by a low-incident-angle deposition method. The both bump resistances are less than 0.5ohm.

[1] K. Hara,et al. Development of SOI pixel process technology , 2011 .

[2] J. Mizuno,et al. Fluxless bonding for fine-pitch and low-volume solder 3-D interconnections , 2011, 2011 IEEE 61st Electronic Components and Technology Conference (ECTC).

[3] Mitsumasa Koyanagi,et al. Current and Future 3D-LSI Technology for the Image Sensor Devices , 2008 .

[4] Dorota Temple,et al. Fabrication and characterization of metal-to-metal interconnect structures for 3-D integration , 2009 .

[5] M. Koyanagi,et al. Three-dimensional integration technology for sensor application using 5-µm-pitch au cone bump connections , 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

[6] Mitsumasa Koyanagi,et al. High-Density Through Silicon Vias for 3-D LSIs , 2009, Proceedings of the IEEE.

[7] P. Enquist. Scalability and Low Cost of Ownership Advantages of Direct Bond Interconnect (DBI¯) as Drivers for Volume Commercialization of 3-D Integration Architectures and Applications , 2008 .

[8] M. Koyanagi,et al. 3D-LSI technology for image sensor , 2009 .

[9] Mitsumasa Koyanagi,et al. Stacked SOI pixel detector using versatile fine pitch μ-bump technology , 2012, 2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International.

[10] M. Koyanagi,et al. Minimizing the local deformation induced around Cu-TSVs and CuSn/InAu-microbumps in high-density 3D-LSIs , 2012, 2012 International Electron Devices Meeting.