noise in series resistance of LDD MOSTs

Abstract Low-doped CMOS transistors have been investigated. On the basis of the corrected optical channel length, the series resistance R s of the channel has been found from a set of MOSTs on the same chip, all having the same channel width, but differing in length. R s is about inversely proportional to the effective gate voltage V G ∗ . The 1/ƒ resistance noise of the series resistance S R s is proportional to V G ∗−3 or V G ∗−4 , depending on the implantation energy used to profile the low-doped parts of source/drain. Increasing the implantation energy from 100 to 180 keV results in a decrease in series resistance and a change in trend of its 1/ƒ noise dependence on V G ∗ . In our experiments, R s is about 15% of the total resistance and S R s 20% of the total noise power in a short-channel MOST at V G ∗ = 1 V .