Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress
暂无分享,去创建一个
G. Reimbold | G. Ghibaudo | S. Orain | H. Dansas | C. Raynaud | R. Gwoziecki | C. Gallon | E. Robilliart | G. Ghibaudo | C. Gallon | G. Reimbold | R. Bianchi | R. Gwoziecki | S. Orain | H. Dansas | C. Raynaud | R.A. Bianchi | E. Robilliart
[1] A. Witvrouw,et al. Viscosity and elastic constants of amorphous Si and Ge , 1993 .
[2] R. Pantel,et al. Elimination of stress induced silicon defects in very high density SRAM structures , 2001, 31st European Solid-State Device Research Conference.
[3] G. Bouche,et al. Accurate modeling of trench isolation induced mechanical stress effects on MOSFET electrical performance , 2002, Digest. International Electron Devices Meeting,.
[4] D. Antoniadis,et al. Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress , 2001, IEEE Electron Device Letters.
[5] Dominique Collard,et al. Piezoresistive simulation in MOSFETs , 1993 .
[6] Dimitri A. Antoniadis,et al. LOCOS-induced stress effects on thin-film SOI devices , 1997 .
[7] David B. Scott,et al. Effects of uniaxial mechanical stress on drive current of 0.13 /spl mu/m MOSFETs , 2003 .
[8] G. Ghibaudo,et al. Electrical analysis of external mechanical stress effects in short channel MOSFETs on (001) silicon , 2004 .
[9] D. Ju,et al. Reduction of STI/active stress on 0.18 /spl mu/m SOI devices through modification of STI process , 2001, 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207).
[10] Richard C. Jaeger,et al. Piezoresistive characteristics of short-channel MOSFETs on (100) silicon , 2001 .
[11] Y. Taur,et al. A new 'shift and ratio' method for MOSFET channel-length extraction , 1992, IEEE Electron Device Letters.
[12] K. Rim,et al. Transconductance enhancement in deep submicron strained Si n-MOSFETs , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
[13] F. Nouri,et al. NMOS drive current reduction caused by transistor layout and trench isolation induced stress , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[14] Ming-Jer Chen,et al. Study on STI mechanical stress induced variations on advanced CMOSFETs , 2003, International Conference on Microelectronic Test Structures, 2003..
[15] E. Takeda,et al. A new aspect on mechanical stress effects in scaled MOS devices , 1990 .