Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors.

The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta2 O5 /Pt system. The device is switched to a low-resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.

[1]  T. Hasegawa,et al.  Position detection and observation of a conducting filament hidden under a top electrode in a Ta2O5-based atomic switch , 2015, Nanotechnology.

[2]  Markus Kubicek,et al.  How Does Moisture Affect the Physical Property of Memristance for Anionic–Electronic Resistive Switching Memories? , 2015 .

[3]  M. Mecklenburg,et al.  Nanofilament Formation and Regeneration During Cu/Al₂O₃ Resistive Memory Switching. , 2015, Nano letters.

[4]  R. Waser,et al.  Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems. , 2016, Nature nanotechnology.

[5]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[6]  Chun-Wei Huang,et al.  Switching Kinetic of VCM‐Based Memristor: Evolution and Positioning of Nanofilament , 2015, Advanced materials.

[7]  R. Waser,et al.  Generic relevance of counter charges for cation-based nanoscale resistive switching memories. , 2013, ACS nano.

[8]  Lih-Juann Chen,et al.  Dynamic evolution of conducting nanofilament in resistive switching memories. , 2013, Nano letters.

[9]  Chun-Wei Huang,et al.  Revealing controllable nanowire transformation through cationic exchange for RRAM application. , 2014, Nano letters.

[10]  G. Zou,et al.  Plasmonic‐Radiation‐Enhanced Metal Oxide Nanowire Heterojunctions for Controllable Multilevel Memory , 2016 .

[11]  J. Shang,et al.  Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films , 2014, Nanotechnology.

[12]  F. Zeng,et al.  Recent progress in resistive random access memories: Materials, switching mechanisms, and performance , 2014 .

[13]  Nagarajan Raghavan,et al.  Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM , 2011 .

[14]  Sergei V. Kalinin,et al.  Humidity effect on nanoscale electrochemistry in solid silver ion conductors and the dual nature of its locality. , 2015, Nano letters.

[15]  R. Waser,et al.  Effects of Moisture on the Switching Characteristics of Oxide‐Based, Gapless‐Type Atomic Switches , 2012 .

[16]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[17]  Lih-Juann Chen,et al.  Observation of Atomic Diffusion at Twin-Modified Grain Boundaries in Copper , 2008, Science.

[18]  T. Tseng,et al.  Status and Prospects of ZnO-Based Resistive Switching Memory Devices , 2016, Nanoscale Research Letters.

[19]  C. D. Nascimento,et al.  Energy Loss Function of Solids Assessed by Ion Beam Energy-Loss Measurements: Practical Application to Ta2O5 , 2015 .

[20]  Kailash Gopalakrishnan,et al.  Overview of candidate device technologies for storage-class memory , 2008, IBM J. Res. Dev..

[21]  Steven G. Bratsch,et al.  Standard Electrode Potentials and Temperature Coefficients in Water at 298.15 K , 1989 .

[22]  Wilfried Vandervorst,et al.  Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices. , 2014, Nano letters.

[23]  M Jurczak,et al.  Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories. , 2016, Nanoscale.

[24]  C. Lai,et al.  Resistive switching characteristics of a Pt nanoparticle-embedded SiO2-based memory , 2013 .

[25]  Su Liu,et al.  Physical model for electroforming process in valence change resistive random access memory , 2015 .

[26]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[27]  Masakazu Aono,et al.  Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure , 2016 .

[28]  Qi Liu,et al.  Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM , 2012, Advanced materials.

[29]  O. Richard,et al.  Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory. , 2015, Nano letters.

[30]  C. Lai,et al.  Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching , 2013, Nanoscale Research Letters.

[31]  R. Waser,et al.  Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures , 2015 .

[32]  Wilfried Vandervorst,et al.  Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices. , 2015, The journal of physical chemistry letters.

[33]  Jr-hau He,et al.  In situ TEM and energy dispersion spectrometer analysis of chemical composition change in ZnO nanowire resistive memories. , 2013, Analytical chemistry.

[34]  P. Delvenne,et al.  NF-κB-induced KIAA1199 promotes survival through EGFR signalling , 2014, Nature Communications.

[35]  Chun-Wei Huang,et al.  Dynamic observation of phase transformation behaviors in indium(III) selenide nanowire based phase change memory. , 2014, ACS nano.

[36]  Qi Liu,et al.  Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode. , 2010, ACS nano.

[37]  I. Valov,et al.  Graphene‐Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices , 2015, Advanced materials.

[38]  C. Foley,et al.  Optically transparent and electrically conducting epitaxial Ta2O films , 2007 .

[39]  Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2 , 2013 .