A membrane planar diode for 200 GHz mixing applications
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The design and fabrication of a monolithically integrated subharmonic mixer for 200 GHz is described. The 1.5 /spl mu/m diameter Schottky diodes are formed on a 5 micron thick GaAs membrane suspended across the RF waveguide. Predicted mixer performance shows improved conversion loss compared with that of conventional flip-chip diodes.
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