We reported in the previous work[1], [2] that void growth was confirmed under room temperature storage in 12years, and the volume shrinkage estimated by residual stress change, agreed with the generated void volume. We investigated further, found that void generation rate of that contact the edge of interconnect depend on the line width, it become larger as line width is narrower. The average void volume at the triple point were calculated, it become larger as the line width is wider. Also they become as large as that of accelerated test in the duration of the accelerated test has terminated (around 1K hour: 100years in room temperature). We conclude that the acceleration model can extrapolate to room temperature range.