Contributions from the DOE center for semiconductor modeling and simulation
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Harold Trease | D. Cartwright | Denise C. George | P. D. Soran | G. N. Hays | Joel D. Kress | R. A. Nebel | G. K. Straub | R. C. Albers | T. J. Kwan | R. B. Walker | J. Kress | H. Trease | R. Nebel | R. Albers | D. George | P. Soran | G. Straub | G. N. Hays | D. Cartwright | T.J. Kwan | R.B. Walker
[1] C. Thompson,et al. The Effect of Variability Among Grain Boundary Energies on Grain Growth in Thin Film Strips , 1994 .
[2] Klavs F. Jensen,et al. Chemical vapor deposition : principles and applications , 1993 .
[3] D. Fotiadis,et al. Flow Phenomena in Chemical Vapor Deposition of Thin Films , 1991 .
[4] Andrew R. Neureuther,et al. 3D Lithography, Etching, and Deposition Simulation (Sample-3D) , 1991, 1991 Symposium on VLSI Technology.
[5] Joe F. Thompson,et al. The National Grid Project , 1992 .
[6] P. Griffin,et al. Point defects and dopant diffusion in silicon , 1989 .
[7] J. R. Lloyd,et al. The electromigration failure distribution: The fine‐line case , 1991 .
[8] K. Jensen,et al. Estimation of the Arrhenius parameters for silane .dblarw. silylene + hydrogen and .DELTA.Hfo(SiH2) by a nonlinear regression analysis of the forward and reverse reaction rate data , 1991 .
[9] H. Sawin,et al. Evaluation of CF4 plasma chemistry by power modulation , 1992 .
[10] T. Cale,et al. A unified line‐of‐sight model of deposition in rectangular trenches , 1990 .