AlGaInAs / InP laser heterostructure improvement

By modeling, the potential barrier effect on the electroluminescence wavelength spread was determined and QW thickness was determined as well. It was achieved during the laser heterostructures growth by MOCVD. The theoretical model was verified by experimental obtained results. For samples grown in a process with a high growth stability rate, a larger spread in the electroluminescence wavelength was detected for a sample with a smaller Al atoms fraction in the barrier layer

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