论文信息 - Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation - 字舞流文

Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

T. Ichihashi | Y. Oshima | T. Eri | M. Shibata | H. Sunakawa | Kenji K. Kobayashi | A. Usui | Takeshi Eri