Intersubband absorption in m-plane ZnO/ZnMgO MQWs

ZnO has great potential for devices in the mid IR and the THz range through the use of intersubband (ISB) transitions in multiple quantum wells (MQWs), although exploiting these transitions requires great control of the epitaxial layers as well as of the physics involved. In this work we present an analysis of non-polar ZnO grown homoepitaxially by molecular beam epitaxy on m-plane ZnO substrates as an ISB optical absorber. The MQWs were characterized under a 45°-bevelled multi-pass waveguide configuration allowing the observation at room temperature of an ISB transition in the 4-6 μm region for p-polarized incident light.

[1]  Martin Feneberg,et al.  Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO , 2016 .

[2]  E. Linfield,et al.  Terahertz range quantum well infrared photodetector , 2004 .

[3]  H. Liu,et al.  Terahertz Semiconductor Quantum Well Photodetectors , 2011 .

[4]  Hideo Ohno,et al.  Intersubband transitions in ZnO multiple quantum wells , 2008 .

[5]  Nakamura,et al.  The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes , 1998, Science.

[6]  M. Sundaram,et al.  Quantum well infrared photodetectors , 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).

[7]  Enrico Bellotti,et al.  Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors , 2009 .

[8]  Eva Monroy,et al.  III-nitride semiconductors for intersubband optoelectronics: a review , 2013 .

[9]  Aidong Shen,et al.  Mid-infrared intersubband absorptions in ZnO/ZnMgO multiple quantum wells , 2014 .

[10]  H. Morkoç,et al.  A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .

[11]  S. Adachi.  GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .

[12]  M. Reiche,et al.  Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes , 2000, Nature.

[13]  Daniel R. Cohn,et al.  Zeeman Splitting of Anomalous Shallow Bound States in ZnO , 1972 .

[14]  A. N. Smirnov,et al.  Phonon dispersion and Raman scattering in hexagonal GaN and AlN , 1998 .