Laser Ablation of Silicon Nanoparticles and Their Use in Charge-Coupled Devices for UV Light Sensing via Wavelength-Shifting Properties

This study explores the controlled laser ablation and corresponding properties of silicon nanoparticles (Si NP) with potential applications in ultraviolet (UV) light sensing. The size distribution of Si NPs was manipulated by adjusting the laser scanning speed during laser ablation of a silicon target in a styrene solution. Characterization techniques, including transmission electron microscopy, Raman spectroscopy, and photoluminescence analysis, were employed to investigate the Si NP structural and photophysical properties. Si NP produced at a laser scanning speed of 3000 mm/s exhibited an average diameter of ~4 nm, polydispersity index of 0.811, and a hypsochromic shift in the Raman spectrum peak position. Under photoexcitation at 365 nm, these Si NPs emitted apparent white light, demonstrating their potential for optoelectronic applications. Photoluminescence analysis revealed biexponential decay behavior, suggesting multiple radiative recombination pathways within the nanoscale structure. Furthermore, a thin film containing Si NP was utilized as a passive filter for a 2nd generation CCD detector, expanding the functionality of the non-UV-sensitive detectors in optics, spectrometry, and sensor technologies.

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