A Fully Analytical MOSFET Model Parameter Extraction Approach

A direct MOSFET model parameter extraction approach is presented which IS implemented on the high volume parametric process control test system that is the standard within the PHILIPS MOS R&D environment its wel! BS in the production environrpents The major advantage of the approach is that all groups involved in the generation of circuits and drocesses, from circuit design to product engineering and from process research to production are working Vith identical MOSFET parameters. Furthermore it IS shown that the approach opens up many usehl process evaluation possibilities through wafermapping and statistical evaluation of the obtained MOSFET model parameters.