论文信息 - Physical Modeling and Scaling Properties of 4 H-SiC Power Devices 171 P-3 - 字舞流文

Physical Modeling and Scaling Properties of 4 H-SiC Power Devices 171 P-3

T. Hatakeyama | T. Shinohe | J. Nishio | C. Ota

[1] M. Lades. Modeling and Simulation of Wide Bandgap Semiconductor Devices , 2000 .