论文信息 - Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm - 字舞流文

Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm

T. Enoki | G. Meneghesso | R. Pierobon | F. Rampazzo | E. Zanoni | T. Suemitsu | F. Clonfero | T. De Pellegrin | M. Bertazzo