Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory

[1]  Hyunsang Hwang,et al.  Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering , 2013, IEEE Electron Device Letters.

[2]  Shibing Long,et al.  A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown , 2013, IEEE Electron Device Letters.

[3]  H. Hwang,et al.  Multi-layer tunnel barrier (Ta2O5/TaOx/TiO2) engineering for bipolar RRAM selector applications , 2013, Symposium on VLSI Technology.

[4]  龙世兵 Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices , 2013 .

[5]  C. Cagli,et al.  Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices , 2013, IEEE Electron Device Letters.

[6]  Y. Nishi,et al.  Physics in designing desirable ReRAM stack structure — Atomistic recipes based on oxygen chemical potential control and charge injection/removal , 2012, 2012 International Electron Devices Meeting.

[7]  U-In Chung,et al.  Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays , 2012, 2012 International Electron Devices Meeting.

[8]  Shimeng Yu,et al.  HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector , 2012, 2012 International Electron Devices Meeting.

[9]  Y. S. Kim,et al.  Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications , 2012, 2012 Symposium on VLSI Technology (VLSIT).

[10]  Navab Singh,et al.  HfO2 Based Resistive Switching Non-Volatile Memory (RRAM) and Its Potential for Embedded Applications , 2012 .

[11]  N. Singh,et al.  Physical mechanisms of endurance degradation in TMO-RRAM , 2011, 2011 International Electron Devices Meeting.

[12]  Hyunsang Hwang,et al.  Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices , 2011 .

[13]  D. Ielmini,et al.  Reset Statistics of NiO-Based Resistive Switching Memories , 2011, IEEE Electron Device Letters.

[14]  An Chen Switching control of resistive switching devices , 2010 .

[15]  Jongwan Jung,et al.  Tunnel Barrier Engineering for Non-Volatile Memory , 2008 .

[16]  K. Aratani,et al.  A Novel Resistance Memory with High Scalability and Nanosecond Switching , 2007, 2007 IEEE International Electron Devices Meeting.

[17]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[18]  S. O. Park,et al.  Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..