Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics
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Anri Nakajima | Shiyang Zhu | Shiyang Zhu | A. Nakajima | Takuo Ohashi | Hideharu Miyake | T. Ohashi | H. Miyake
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