论文信息 - Ten-milliwatt operation of an AlGaN-based light emitting diode grown on GaN substrate

Ten-milliwatt operation of an AlGaN-based light emitting diode grown on GaN substrate

Ten-milliwatt output at 352 nm wavelength is obtained in the room-temperature cw operation of an AlGaN-based ultraviolet light emitting diode. The maximum internal quantum efficiency is estimated to be more than 80%. We also demonstrate the excitation of fluorescence of three basal colors by this wavelength.

Naoki Kobayashi | T. Nishida | N. Kobayashi | T. Nishida

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