Instable mechanisms during unclamped operation of high power IGBT modules

Abstract The behaviour in terms of robustness during unclamped operations of power IGBT modules is presented. The experimental characterization is aimed to identify the main instable phenomena during unclamped turn-off in power IGBT modules. Several devices of different generations, current and voltage ratings have been analyzed. Thanks to a non-destructive experimental set-up, it is possible to observe instable phenomena without causing the damage of the device under test. In this paper, it is shown that the destructive conditions during unclamped operations are preceded by precursors on the gate side which indicate instable phenomena taking place inside the device. The dependence of the destructive phenomenon on the driver conditions are widely and exhaustively analyzed.

[1]  K. Heumann,et al.  Second breakdown and latch-up behavior of IGBTs , 2002 .

[2]  T. Misawa.  Multiple uniform layer approximation in analysis of negative resistance in p-n junction in breakdown , 1967 .

[3]  Florin Udrea,et al.  An experimental and numerical investigation of IGBT blocking characteristics , 2000, Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435).

[4]  K. Sugiyama,et al.  Turn-off switching analysis considering dynamic avalanche effect for low turn-off loss high-voltage IGBTs , 2004, IEEE Transactions on Electron Devices.

[5]  J. Yamashita,et al.  An experimental and numerical study on the forward biased SOA of IGBTs , 1996 .

[6]  L. Fratelli,et al.  Reverse bias instabilities in bipolar power transistors with cellular layout , 2001 .

[7]  G. Venkataramanan,et al.  Investigation of parallel operation of IGBTs , 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

[8]  J.B. Bernstein,et al.  Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).

[9]  Francesco Iannuzzo,et al.  Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules , 2008 .

[10]  T. Misawa,et al.  Silicon transit time avalanche diode , 1965 .

[11]  R. Sittig,et al.  Current filamentation in bipolar power devices during dynamic avalanche breakdown , 2000 .

[12]  H. Hagino,et al.  A study on the IGBT's turn-off failure and inhomogeneous operation , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.