Critical resolved shear stress measurements for silicon‐doped GaAs single crystals

The critical resolved shear stress of GaAs single crystalsdoped with silicon was directly measured using dynamical compression tests at high temperatures. At the melting point the critical resolved shear stress is 0.032 and 0.027 kg/mm2 for crystals doped with 1.5×101 8 and 3×101 8 cm− 3silicon, respectively. These values are lower than that for undoped GaAs. This reinforces our earlier conclusion that solid solution hardening and the reduction of crystallographic glide is not the only mechanism by which dopants reduce the formation of dislocations during the growth of single crystals from the melt.

[1]  E. Bourret,et al.  Measurements of the critical resolved shear stress for indium-doped and undoped GaAs single crystals , 1986 .

[2]  B. W. Swanson,et al.  Growth and properties of large-diameter indium lattice-hardened GaAs crystals , 1986 .

[3]  T. Kajimura,et al.  Growth of silicon-doped dislocation-free gaas crystals by the LEC technique for optical device applications , 1986 .

[4]  S. Laderman,et al.  Microscopic identification of defects propagating through the center of silicon and indium‐doped liquid encapsulated Czochralski grown GaAs using x‐ray topography , 1985 .

[5]  R. Rupp,et al.  Deformation behaviour and dislocation formation in undoped and doped (Zn, S)InP crystals , 1985 .

[6]  J. Hirth,et al.  Mechanism for dislocation density reduction in GaAs crystals by indium addition , 1985 .

[7]  H. Gatos,et al.  Fermi energy control of vacancy coalescence and dislocation density in melt-grown GaAs , 1984 .

[8]  M. Duseaux.  Temperature profile and thermal stress calculations in GaAs crystals growing from the melt , 1983 .

[9]  P. Roksnoer,et al.  Dislocation-free GaAs and InP crystals by isoelectronic doping , 1983 .

[10]  Y. Nanishi,et al.  Electron Trap‐Free Low Dislocation Melt‐Grown GaAs , 1981 .

[11]  V. B. Osvensky,et al.  Effect of doping on formation of dislocation structure in semiconductor crystals , 1981 .

[12]  A. S. Jordan,et al.  A thermoelastic analysis of dislocation generation in pulled GaAs crystals , 1980, The Bell System Technical Journal.

[13]  A. D. Kock,et al.  The effect of doping on microdefect formation in as‐grown dislocation‐free Czochralski silicon crystals , 1979 .

[14]  M. G. Mil’vidskiĭ,et al.  Creation of defects during the growth of semiconductor single crystals and films , 1978 .

[15]  J. Matsui,et al.  Impurity effect on grown‐in dislocation density of InP and GaAs crystals , 1978 .

[16]  Sun Keun Choi,et al.  Dislocation Velocities in GaAs , 1977 .

[17]  S. Copley,et al.  Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or Zn , 1975 .

[18]  G. Jenkins,et al.  Deformation of single crystals of gallium arsenide , 1973 .

[19]  P. Haasen,et al.  Dislocations and Plastic Flow in the Diamond Structure , 1969 .

[20]  J. Brice,et al.  Effect of Arsenic Pressure on Dislocation Densities in Melt-grown Gallium Arsenide , 1966, Nature.