论文信息 - Surface-barrier p-CdTe-based photodiodes

Surface-barrier p-CdTe-based photodiodes

Diodes fabricated by electron-beam evaporation of Al on p-CdTe substrates followed by removal of the metal layer have been investigated. It is shown that the diode electrical characteristics are determined by generation-recombination processes in the surface barrier, whereas the photoelectric properties are governed by the drift and diffusion current components, which are strongly influenced by surface recombination of carriers. The measured data are used to calculate the photoelectric quantum yield and the x-ray detection efficiency.

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