论文信息 - Silicon transistor hits 500GHz performance

Silicon transistor hits 500GHz performance

Low-cost silicon germanium technology is chasing indium phosphide heterojunction bipolar transistor performance. US researchers have pushed the cut-off frequency for SiGe HBTs to 500 GHz, but this is still about 200 GHz behind the best InP result so far.

Mike Cooke

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