Characteristics and mechanism study of cerium oxide based random access memories

In this work, low operating voltage and high resistance ratio of different resistance states of binary transition metal oxide based resistive random access memories (RRAMs) are demonstrated. Binary transition metal oxides with high dielectric constant have been explored for RRAM application for years. However, CeOx is considered as a relatively new material to other dielectrics. Since research on CeOx based RRAM is still at preliminary stage, fundamental characteristics of RRAM such as scalability and mechanism studies need to be done before moving further. Here, we show very high operation window and low switching voltage of CeOx RRAMs and also compare electrical performance of Al/CeOx/Au system between different thin film deposition methods and discuss characteristics and resistive switching mechanism.

[1]  Hisashi Shima,et al.  Resistive Random Access Memory (ReRAM) Based on Metal Oxides , 2010, Proceedings of the IEEE.

[2]  Alexander M. Grishin,et al.  Giant resistance switching in metal-insulator-manganite junctions : Evidence for Mott transition , 2005 .

[3]  I. Lubomirsky,et al.  Chemical Reduction and Wet Etching of CeO2 Thin Films , 2005 .

[4]  Sangsul Lee,et al.  Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides , 2007 .

[5]  Sean Li,et al.  Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells. , 2013, ACS applied materials & interfaces.

[6]  Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory , 2013 .

[7]  Li Ji,et al.  Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory , 2013 .

[8]  S. Banerjee,et al.  Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy , 2013 .

[9]  Yen-Ting Chen,et al.  Effects of sidewall etching on electrical properties of SiOx resistive random access memory , 2013 .

[10]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[11]  O. Gunnarsson,et al.  Electron spectroscopies for Ce compounds in the impurity model , 1983 .

[12]  T. Chikyow,et al.  Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM) , 2013, Journal of Solid State Electrochemistry.

[13]  T. Komeda,et al.  Epitaxial growth of CeO2(111) film on Ru(0001): scanning tunneling microscopy (STM) and x-ray photoemission spectroscopy (XPS) study. , 2014, The Journal of chemical physics.

[14]  F. Larachi,et al.  Ce 3d XPS study of composite CexMn1 xO2 y wet oxidation catalysts , 2002 .

[15]  Li Ji,et al.  Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography. , 2014, Nano letters.

[16]  Fei Zhou,et al.  Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing , 2014 .

[17]  R. Murakami,et al.  Organization of cubic CeO2 nanoparticles on the edges of self assembled tapered ZnO nanorods via a template free one-pot synthesis: significant cathodoluminescence and field emission properties , 2012 .

[18]  Jack C. Lee,et al.  Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory , 2012 .

[19]  Yen-Ting Chen,et al.  Study of polarity effect in SiOx-based resistive switching memory , 2012 .

[20]  Sean Li,et al.  Oxygen level: the dominant of resistive switching characteristics in cerium oxide thin films , 2012 .

[21]  K. Kinoshita,et al.  Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide , 2006 .

[22]  Yen-Ting Chen,et al.  Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory , 2012 .

[23]  Fei Zhou,et al.  Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization , 2014 .

[24]  C. Y. Chen,et al.  Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device , 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

[25]  Yen-Ting Chen,et al.  Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films , 2012, IEEE Electron Device Letters.

[26]  T. Tseng,et al.  Resistive switching characteristics of Pt/CeOx/TiN memory device , 2014 .